The AWT6301 meets the increasing demands for higher efficiency and linearity in AMPS/CDMA 1X handsets, while reducing pcb area by 44%. The package pinout was chosen to enable handset manufacturers to switch from a 4mm x 4mm PA module with very few layout changes to the phone board. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output pow

The ACA2407E is a highly linear, monolithic GaAs RF H897amplifier that has been developed to replace, in new designs, standard CATV hybrid amplifiers. Offered in a convenient surface mount package, the MMIC consists of two pairs of parallel amplifiers that are optimized for xceptionally low distortion and noise figure.

The AWT6138 PCS CDMA Power Amplifier is a high performance CDMA2000/ 1XRTT amplifier designed specifically for PCS wireless applications. This rugged, easy to use InGaP HBT design delivers state of the art efficiency and temperature stability with very low DC power consumption. The AWT6138 PA module has the lowest CDG currents available to handset manufacturers today.

The RFS P2023 power amplifier is a high performance InGaP HBT IC designed for transmit applications in the 2.4-2.5 GHz band. The part is matched at the input and output so no additional RF matching components are required off-chip. The PA exhibits unparalleled linearity and efficiency for both 802.11g and 802.11b WLAN systems. The power detector is temperature compensated on chip enabling a single-ended output voltage. The part is biased by a single +3.3 V supply.

DESCRIPTIONThe AGB3307 is one of a series of high performanceInGaP HBT amplifiers designed for use inlow distortion. No external matching componentsare needed for insertion into a 50 system. With ahigh output IP3, low noise figure and wide bandoperation, the AGB3307 is ideal for wirelessinfrastructure applications such as Cellular Base Stations, MMDS, and WLL. Offered in a low cost SOT-89 surface mount package, the AGB3307requires a single supply voltage, and typicallyconsumes 0.6 Watts of power

DESCRIPTIONFigure 1: Block DiagramAWT6388R2Data Sheet - Rev 2.109/2008AWT6388Figure 2: Pinout (X-ray Top View)Table 1: Pin DescriptionPINNAMEDESCRIPTION1VCC234V5V7910VCCData Sheet - Rev 2.109/2008 AWT63883ELECTRICAL CHARACTERISTICSTable 2: Absolute Minimum and Maximum RatingsStresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.Ta

Typical Optical and Electrical Characteristics Test Conditions: 100 mA forward current, 25o C

The ANADIGICS AMT8304 is a 3.3V monolithically integrated Metal-Semiconductor-Metal (MSM) photodetector and transimpedance amplifier (TIA) used to convert an 850nm input optical signal into a differential output voltage, and is manufactured in ANADIGICS™ 6 GaAs wafer fabrication facility. The integrated MSM and TIA receiver maximizes the receiver performance by minimizing the photodetector input parasitics to the TIA and internally biasing the photodetector to achieve high sensitivity, ba

The ATA00501D1C may be operated from a positive supply as low as +4.5 V and as high as +6.0 V. Below +4.5 V, bandwidth, overload and sensitivity will degrade, while at +6.0 V, bandwidth, overload and sensitivity improve (see "Bandwidth vs. Temperature" curves). Use of surface mount (preferably MIM type capacitors), low inductance power supply bypass capacitors (>=56pF) are essential for good high frequency and low noise performance. The power supply bypass capacitors should be mount

The ACD2204 uses both GaAs and Si technology to provide the downconverter and dual synthesizer functions in a double conversion tuner gain block,local oscillator, balanced mixer, IF Amplifier, and dual synthesizer. The specifications meet the requirements of CATV/TV/Video and Cable Modem Data applications.