The 13PD150-TO, an InGaAs photodiode with a 150mm- iameter photosensitive region packaged in a TO-46 header, is intended for moderate-to-high speed applications. Efficient coupling to mulit-mode fiber in active device receptacles is enabled by the relatively large photosensitive area. Planar semiconductor design and dielectric passivation provide low noise performance. Reliability is assured by hermetic sealing and a 100% purge burn-in ( 200oC, 15 hours, Vr = 20V ). Chips can also be attached an

The ANADIGICS AWL6950 dual band power amplifier is a high performance InGaP HBT power amplifier module designed for transmit applications in the 2.4-2.5 GHz and 4.9-5.9 GHz bands. Matched to 50 ? at all RF inputs and outputs, the part requires no additional RF matching components off-chip, making the AWL6950 the world™s simplest dual band PA module implementation available. The PA exhibits unparalleled linearity and efficiency for IEEE 802.11g, 802.11b, and 802.11a WLAN systems under the t

The 35PD300-TO, an InGaAs photodiode with a 300µm-diameter photosensitive region packaged in a TO- 46 header. This device is one of Telcom Devices' most versatile optoelectronic components, with applications in high sensitivity instrumentation, laser back-facet monitoring, and moderate-bit-rate telecomm and datacomm transmission. Planar semiconductor design and dielectric passivation provide superior noise performance. Reliability is assured by hermetic sea

The AWS5506 is a Single Pole Double Throw GaAs MMIC switch assembled in a SOT-6 plastic package. The AWS5506 is designed for analog and digital application that require for insertion loss, small size,and low cost. State selection is achieved with a complimentary positive voltage (requires positive bias Vs, and blocking caps) or negative voltage (no Vs or blocking caps required).

DESCRIPTIONThe ARA05050 is a GaAs IC designed to provide the functions in a CATV Set-Top Box or Cable Modem. It incorporates a digitally controlled precision step attenuator that is preceded by an ultra low noise the MCNS/DOCSIS requirements for harmonic Fop Box AS28 with Heat performance at a +58dBmV output level while requiring only a single polarity +5V supply. Both the input and the output are single-ended and matched to 75 Ohms. The precision attenuator provides up to 30 dB offered in a 28-

The AWS5533 is a single pole, three throw (SP3T) RF switch developed for CDMA systems. Manufactured in ANADIGICS™s state-of-the-art pHEMT process, the device uses patent- ending circuit topologies to provide low insertion loss, high port-toport isolation, and high linearity needed to enhance the performance of CDMA radios. The AWS5533 is offered in a 12-lead 3 mm x 3 mm MLF package.

The 13PD75-S, an InGaAs photodiode with 75mm-diameter photosensitive region and mounted on a metallized ceramic substrate, is intended for high speed and low noise applications. The diameter of the photosensitive region is sufficiently small to enable operation at very low dark current and low capacitance and yet large enough to allow efficient coupling to multi-mode fiber. Planar semiconductor design and dielectric-passivation provide very low noise performance. Reliability is assured by 100% p

The ARA05050 is a GaAs IC desiganed to provide the reverse path amplification and output level control functions in a CATV Set-Top Box or Cabel Modem. It incroporates a digitally controlled precision step attenuator that is preceded by an ultra low noise amplifier stage, and followed by an ultra-liner output driver amplifier.

The 2.2PD series of detectors is based on GaInAsSb/GaAlAsSb heterostructure technology. Spectral sensitivity lies between 1 and 2.4 mm, and peak response of 1 A/W occurs at about 2.2mm. Operation can be photovoltaic or photoconductive, and pulsed or CW. Price/performance compared to extended wavelength InGaAs is superior due to the high shunt resistance and low price. Standard packaging includes TO-18 and TO-5 headers.

The AWT6114 is a high power, high efficiency amplifier module for Korean Band PCS CDMA wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, serve to increase handset talk and standby time. The self-contained 4mm x 4mm surface mount package incorpor