The 2.2 PD series of detectors is based on GAInAsSb/GaAlAsSb heterostructure technology. Spectral sensitivity lies between 1.0 and 2.4 mm, and peak response of 1 A/W occurs at about 2.2 mm. Operation can be photovoltaic or photoconductive, and pulsed or CW. Price/performance compared to extended wavelength InGaAs is superior due to the high resistance and low price. Standard packaging includes TO-18 and TO-5 headers.The 3.4 PD series of detectors is based on InAsSbP/InAs heterostructure technolo

The ACA1205 is a surface mount monolithic GaAs RF Linear Amplifier that has been developed to replace, in new designs, the standard CATV Hybrid amplifiers currently in use.

The AWT6114 is a high power, high efficiency amplifier module for Korean Band PCS CDMA wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, serve to increase handset talk and standby time. The self-contained 4mm x 4mm surface mount package incorpor

DESCRIPTIONCCMODE pin. The Figure 1: Block DiagramControlVVVCCAVMODE1113111412342VCC6109ControlV Dat(pad)7VMODE2AWT6224R2Data Sheet - Rev 2.211/2008AWT6224RTable 1: Pin DescriptionFigure 2: PinoutVVMODE111423410131211VCCA69VVVCC7VMODE2PINNAMEDESCRIPTION1V23VMODE14VVMODE267V91011VCCA12VCC1314Data Sheet - Rev 2.211/2008 AWT6224R3ELECTRICAL CHARACTERISTICSTable 2: Absolute Minimum and Maximum RatingsStresses in excess of the absolute ratings may cause permanent damage. Functional operation is not i

DESCRIPTIONControlVBATTVRFRFV1786at342VCC2Data Sheet - Rev 2.001/2009AWC6312RFigure 2: Pinout (X-ray Top View)Table 1: Pin DescriptionVBATTRFVRFVVCC1287634PINNAMEDESCRIPTION1VBATT2RF3V4V67RF8VCCData Sheet - Rev 2.001/2009 AWC6312R3ELECTRICAL CHARACTERISTICSTable 2: Absolute Minimum and Maximum RatingsStresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adver

The AWT921 is a monolithic amplifier for use in communication systems that require high gain and output intercept point. This device has been specifically designed for multi carrier and micro cell base station applications.

The PD3M is an InGaAs photodiode with a photosensitive region 3mm in diameter. Applications include sensing and other high sensitivity instrumentation. Class A devices feature very low dark current and high shunt resistance.

The ANADIGICS AMT128503, is a 5V integrated Metal Semiconductor metal photodetector and transimpedance amplifier(TOA) used to convert an 850nm input optical signal into a differntial output voltage and is manufactured in ANADIGICS 6 GaAs wafer fabrication facility

The AWT6276 meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6275 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and s

The AUC2109 iis a Monolithic GaAs IC incoporating all upconvertrs functions of a double conversion CATV Cable Modem and TV tuner gain block Oscillator and a double balanced mixer