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ANADIGICS, Inc

anadigics.com

High Linearity Low Noise Wideband Gain BLock

The AGB3302 is one of a series of high performance Ingap HBT amplifiers designed for use in applications requiring high linearity, low noise and low distortion no external matching components are needed for insertion into a 50 system

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reliability., AGB3302S24Q1, AGB3302

04/2008S3 Package1 GHz Balanced Low Noise FEATURE1

FEATURE12 dB Gain+5 V Nominal Supply VoltageHigh LinearityLow Noise Figure: 2.7 dB (typ)Characterized at +25 dBmV output powerWide Band operation to beyond 1 GHz-40 to +85 CRoHS-Compliant Package OptionSet Top BoxesHome GatewayThe ABA3100 is a monolithic IC intended for use in applications requiring high linearity, such as Cellular small size, reduced component count, and high reliability are important. 12 dB 12 dBRFINRFINRFOUTRFOUT2Data Sheet - Rev 2.604/200812FB1GNDRFIN2IADJRFOUT1/VDD1GNDGNDGN

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ABA3100_Rev_2, IADJ(4), CAP.6MURATAGRM39X7R1103K25VC7, MHz550, ABA3100, GHz-40, TA-40-85, CAP.1DIGI-KEY, MHz350, A214RFOUT1/VDD1RF, FEATURE12, T2BALUN2PULSE, C8470, L2390, A17RFIN2RF, ENGINEERINGCX2024PCB1STANDARD, SOIC3,500, AdjC4C3RF, InT1Not, A111RFOUT2VDD2RF, CORPP5275-NDC5, OutT2C5I

AWS5504 GaAs IC Negative Control SPDT Reflective Switch DC-2.0 GHz Data Sheet - Rev 1

AWT6137 HELPTM Cellular Dual Mode AMPS/CDMA 3.4V/28dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.1

The AWT6137 CDMA/AMPS Power Amplifier is a high performance CDMA2000/ 1XRTT amplifier designed specifically for Cellular wireless applications. This rugged, easy to use InGaP HBT design delivers state of the art efficiency and temperature stability with very low DC power consumption. The AWT6137 PA module has the lowest CDG currents available to handset manufacturers today.

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AWT6137M7P8, AWT6137, AWT613

High Speed InGaAs p-i-n Photodiode

The 13PD55-F is an InGaAs photodiode with a 55mm-diameter photosensitive region packaged in a co-axial fiber pigtailed module. Modules are available with stock or customer-supplied fiber in single or multi-mode versions. The coaxial package offers streamlined design and strain-relief for the fiber. Planar semiconductor design and dielectric passivation provide superior noise performance. Reliability is assured by hermetic sealing and a 100% purge burn-in (200°C, 15 hours

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13PD55-F

Microcomputer Datasheets Important Notices TLCS-870/C Series TMP86PH06UG

DESCRIPTIONFigure 1: Block Diagram and Pinout1245619202122241817161514121110987Ith2.4 GHz PA5 GHz PACC1 2GGND OUT 2GNCGNDT OUT 5GNCGND OUT 5GGNDCC1 5G 5GGGTP 2G 2GTP 5GOuuthIth 2GCC2 5G 5GC 5GOutputhPowerDeteorPowerDeteorCC2 2G 2G Crol CrolT OUT 2G2Data Sheet - Rev 2.107/2008AWL9924Table 1: Pin DescriptionPINNAMEDESCRIPTION1PC 2G2P 2GIN 2G.4IN 5G.5P 5G6PC 5G7CC1 5G8BC 5G9CC2 5G10 5G11GND12OUT 5GGND14NC15OUT 5G16OUT 2G17NC18GND19OUT 2GData Sheet - Rev 2.107/2008 AWL9924Table 1: Pin Description (C

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2G19CC2, L2R4619U1AWL9924PC, 5G-700mAIN, 5G6CC1, AWL992419NOTES, 2G24BC, 5G11GND12OUT, 5G8CC1, 2G17NC18GND19OUT, C-40-85, 5dBm-4085, 5G5PC, AWL992417PACKAGE, 2G22CC2, SPP-0124, 5G10OUT, 5G8BC, 2G16OUT, AWL9924_Rev_2, 2GCC2, 5G4P, 5GGNDCC1, 2G22, PACKAGING-40, 5G10, 5G7CC1, 2G12IN, AWL99247(TC, 2G2P, 5G16OUT, 5GGND14NC15OUT, 2G2120OUT, PACC1, 5G.5P, 5G6PC, 2G.4IN, AWL99245(TC, 2G24CC1, 5G1514BC, 5G9CC2

13PD150-S High Performance InGaAs p-i-n Photodiode

The 13PD150-S, an InGaAs photodiode with a 150mm photosensitive region mounted on a metalized ceramic substrate, is intended for moderate-to-high speed applications. Efficient coupling to multi-mode fiber in hybrid modules is enabled by the relatively large Photosensitive area. Planar semiconductor design and dielectric passivation provide low noise performance. Reliability is assured by a 100% purge burn-in (200oC, 15 hours, Vr = 20V). Chips can also be attached and wire bonded to customer-supp

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13PD150-S

AWT921 900 MHz Integrated Power Amp Data Sheet - Rev 2.0

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