ANADIGICS, Inc
High Linearity Low Noise Wideband Gain BLock
The AGB3302 is one of a series of high performance Ingap HBT amplifiers designed for use in applications requiring high linearity, low noise and low distortion no external matching components are needed for insertion into a 50 system
04/2008S3 Package1 GHz Balanced Low Noise FEATURE1
FEATURE12 dB Gain+5 V Nominal Supply VoltageHigh LinearityLow Noise Figure: 2.7 dB (typ)Characterized at +25 dBmV output powerWide Band operation to beyond 1 GHz-40 to +85 CRoHS-Compliant Package OptionSet Top BoxesHome GatewayThe ABA3100 is a monolithic IC intended for use in applications requiring high linearity, such as Cellular small size, reduced component count, and high reliability are important. 12 dB 12 dBRFINRFINRFOUTRFOUT2Data Sheet - Rev 2.604/200812FB1GNDRFIN2IADJRFOUT1/VDD1GNDGNDGN
AWS5504 GaAs IC Negative Control SPDT Reflective Switch DC-2.0 GHz Data Sheet - Rev 1
The AWS5504 is a Single Pole Double Throw (SPDT) GaAs MMIC switch assembled in a SOT-6 plastic package. The AWS5504 is designed for analog and digital applications that require low insertion loss,high linearity, and small size. The switch can be controlled with positive, negative, or a combination of both voltages.
AWT6137 HELPTM Cellular Dual Mode AMPS/CDMA 3.4V/28dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.1
The AWT6137 CDMA/AMPS Power Amplifier is a high performance CDMA2000/ 1XRTT amplifier designed specifically for Cellular wireless applications. This rugged, easy to use InGaP HBT design delivers state of the art efficiency and temperature stability with very low DC power consumption. The AWT6137 PA module has the lowest CDG currents available to handset manufacturers today.
Balanced Low Noise Linear Amplifier
The ABA3100 is a monolithic IC intended for use in applications requiring high linearity, such as Cellular Telephone Base Station Driver Amplifiers, CATV Fiber Receiver and Distribution Amplifiers, CATV Drop Amplifiers, CATV Set Top Boxes and Home Gateways
High Speed InGaAs p-i-n Photodiode
The 13PD55-F is an InGaAs photodiode with a 55mm-diameter photosensitive region packaged in a co-axial fiber pigtailed module. Modules are available with stock or customer-supplied fiber in single or multi-mode versions. The coaxial package offers streamlined design and strain-relief for the fiber. Planar semiconductor design and dielectric passivation provide superior noise performance. Reliability is assured by hermetic sealing and a 100% purge burn-in (200°C, 15 hours
AGC Transimpedance Amplifier SONET OC-3
The ANADIGICS ATA01501 is a 5V low noise Transimpedance amplifier with AGC designed to be used in OC-3/STM-1 fiber optic links. The device is used in conjuction with a photodetector (PIN diode or avalanche photodiode) to convert an optical signal into an output voltage.
Microcomputer Datasheets Important Notices TLCS-870/C Series TMP86PH06UG
DESCRIPTIONFigure 1: Block Diagram and Pinout1245619202122241817161514121110987Ith2.4 GHz PA5 GHz PACC1 2GGND OUT 2GNCGNDT OUT 5GNCGND OUT 5GGNDCC1 5G 5GGGTP 2G 2GTP 5GOuuthIth 2GCC2 5G 5GC 5GOutputhPowerDeteorPowerDeteorCC2 2G 2G Crol CrolT OUT 2G2Data Sheet - Rev 2.107/2008AWL9924Table 1: Pin DescriptionPINNAMEDESCRIPTION1PC 2G2P 2GIN 2G.4IN 5G.5P 5G6PC 5G7CC1 5G8BC 5G9CC2 5G10 5G11GND12OUT 5GGND14NC15OUT 5G16OUT 2G17NC18GND19OUT 2GData Sheet - Rev 2.107/2008 AWL9924Table 1: Pin Description (C
13PD150-S High Performance InGaAs p-i-n Photodiode
The 13PD150-S, an InGaAs photodiode with a 150mm photosensitive region mounted on a metalized ceramic substrate, is intended for moderate-to-high speed applications. Efficient coupling to multi-mode fiber in hybrid modules is enabled by the relatively large Photosensitive area. Planar semiconductor design and dielectric passivation provide low noise performance. Reliability is assured by a 100% purge burn-in (200oC, 15 hours, Vr = 20V). Chips can also be attached and wire bonded to customer-supp
AWT921 900 MHz Integrated Power Amp Data Sheet - Rev 2.0
The AWT921 is a monolithic amplifier for use in communication systems that require high gain and output intercept point. This device has been specifically designed for multi-carrier and micro-cell base station applications. This device is manufactured on a high power MESFET process and has an on-chip bias circuit that does not require highly regulated positive and negative supplies to establish the proper operating point.