Current URL:   


ANADIGICS, Inc

anadigics.com

05/2009HELP3TM Band 8/WCDMA 3.4 V/28.5 dBm Linear

DESCRIPTIONTMANADIGICS HELP3TMon an advanced InGaP HBT MMIC technology offering AWU6608123451087VBATTRFINVVMODE1VENCPLOUTGNDCPLINRFOUTVCCVoltage RegulationCPL2ADVANCED PRODUCT INFORMATION - Rev 0.205/2009AWU6608Figure 2: Pinout (X-ray Top View)Table 1: Pin DescriptionVBATTRFINVMODE2 VMODE1VEN12347810CPLOUTGNDCPLINRFOUTVCC12347810PINNAMEDESCRIPTION1VBATTBattery Voltage2RFINRF Input3VMODE2 No Connection4VMODE1Mode Control Voltage 15VENCPLOUTCoupler Output7GNDGround8CPLINCoupler InputRFOUTRF Output

Relevant Keywords: 
AWU66083ELECTRICAL, Inc.141, V-135-dBm/HzPOUT, C4ADVANCED, MSL-3APPLICATIONSPRODUCT, AVBATTCCVENABLEMODE1, HELP3TMon, PACKAGING-30, BBB6, MODEVENABLEVMODE1VCCVBATT, VMODEMODE1, 6608R3, GUIDELINE8ADVANCED, OUTLINE6608RLLLLNNBBBCC1, AWU6608_Rev_0, MODE1, VBATTMODE1, 2fo-42-50-dBcPOUT, DOT5, NUMBER4, AWU66085APPLICATION, KONG7, V-8-mAVMODE1, 0V-143-dBm/HzPOUT, DIA12, NONE2

35PD3M-TO Large Area InGaAs p-i-n Photodiode

The 35PD3M-TO series of InGaAs photodiodes has a 3mm- diameter photosensitive region. Applications include high sensitivity instrumentation and sensing. Class A devices feature very low dark current and high dynamic impedance. High reliability is assured through planar, dielectric- assivated design, and hermetic packaging in TO-5 headers. Chips can also be attached and wire bonded to customer-supplied or other specified packages.

Relevant Keywords: 
35PD3M-TO

Active Splitter for CATV Set-Top Boxes

This active splitter from ANADIGICS accepts a balanced RF input in the 50 to 860 MHz frequency range and provides three balanced RF outputs with minimal degradation in signal quality. The single- package surface mount device amplifies the input signals using highly linear, low noise amplification stages, and couples the amplified signal to three separate output paths to drive video tuner inputs.

Relevant Keywords: 
APS3602, 3602S

Advanced RFSP5021 5.15-5.85 GHz U-NII Power Amplifier

The RFSP5021 power amplifier is a high-performance GaAs HBT IC designed for use in transmit applications in the 5.15-5.85 GHz frequency band. With a P1dB of 25 dBm, the device is ideal as a final stage for wireless LAN applications requiring high transmit linearity. The part demonstrates very low error vector magnitude (EVM) at the full 54 Mbps data rate for 802.11a. The PA can be easily matched for optimum linearity and power performance at the desired frequency of operation between 5.15 and 5.

Relevant Keywords: 
RFSP5021, DRFS-P5021-DSH

Address-Programmable Reverse Amplifier With Step Attenuator

The ARA2000 is designed to provide the reverse path amplification and output level control functions in a CATV Set-Top Box or Cable Modem.it incorporates a digitally controlled precition step attenuator that is preceded by an ultra Low noice amplifier stage, and followed by an ultra-linear output driver amplifier.

Relevant Keywords: 
ARA2001ARA2000, ARA2001, ARA2000S23TR, ARA2000S23P0, ARA2000

04/2008S33 Packagewith Heat SlugFEATURE12 dB Gain+

FEATURE12 dB Gain+8 V Nominal Supply OperationHigh LinearityLow Noise Figure: 2.7 dB (typ.)Characterized at +34 dBmV output powerWide Band Operation to Beyond 1 GHz-40 to +85RoHS-Compliant Package Heat Slug Package for enhanced Thermal ManagementSet Top BoxesHome GatewayThe ABA3101 is a monolithic IC intended for use in applications requiring high linearity, such as Cellular count, and high reliability are important. 12 dB 12 dBRFINRFINRFOUTRFOUT2Data Sheet - Rev 2.104/20082FBDRF2ADJRFTDDDD87543

Relevant Keywords: 
ABA3101_Rev_2, L4INDUCTOR2TOKOCONNECTORS75, CAP.MURATAGRM39X7R1103K25VC7, MHz800, ABA3101, L2470, CAP.1DIGI-KEY, MHz550, A214RFOUT1/VDD1RF, IADJ(4), C8330, MABAES0029, A17RFIN2RF, GHz-40, AdjC4C3RFINT1C12L3C11C13L4Not, MABACT0069, A111RFOUT2/VDD2RF, CORPP5275-NDC5

AWT6112 Cellular Dual Mode AMPS/CDMA 3.4V/28dBm Linear Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1

The AWT6112 is a high power, high efficiency amplifier module for dual mode AMPS/CDMA wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for differentoutput power levels, and a shutdown mode with low leakage current, serve to increase handset talk and standby time. The self contained 4mm x 4mm surface mount package incorporat

Relevant Keywords: 
AWT6112

02/2008APS3611870 GHz Two-way Active Power Splitte

DESCRIPTIONFigure 1: Functional Block DiagramAPS3611RF InputRF Output 1RF Output 2GNDCurrentAdjust2PRELIMINARY DATA SHEET - Rev 1.102/2008APS3611Table 1: Pin DescriptionFigure 2: Pinout (X-ray Top View)RFINGNDGNDGNDIADJRFOUT2RFOUT1GNDGNDGNDGNDGND149873256101112GND PaddlePINNAMEDESCRIPTIONGround2Ground4GroundOUT27Ground8Ground9GroundGroundGroundPRELIMINARY DATA SHEET - Rev 1.102/2008 APS3611ELECTRICAL CHARACTERISTICSTable 2: Absolute Minimum and Maximum RatingsStresses in excess of the absolute r

Relevant Keywords: 
APS3611_Rev_1, APS3611PERFORMANCE, APS3611ELECTRICAL, APS36119NOTESWARNINGIMPORTANT, QFN3, APS36117APPLICATION

Preliminary RFSP5022 5.15-5.85 GHz U-NII Power Amplifier

The RFSP5022 power amplifier is a high-performance GaAs HBT IC designed for use in transmit applications in the 5.15-5.85 GHz frequency band. With a P1dB of 25 dBm, the device is ideal as a final stage for wireless LAN applications requiring high transmit linearity. The part demonstrates very low error vector magnitude (EVM) at the full 54 Mbps data rate for 802.11a. The input of the PA is matched to 50 ohms and the output can be easily matched for optimum linearity and power performance at the

Relevant Keywords: 
PRFS-P5022-008, PRFS-P5022-007, RFSP5022, PRFS-P5022-006, PRFS-P5022-EVL, PRFS-P5022-005, PRFS-P5022-009, DRFS-P5022-DSH

Syndicate content

Popular content