The AWT6109 is a 3.5V (3.0V to 4.2V) high efficiency, 3 stage amplifier module for Korean Band PCS handsets. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Full output power is achieved at a low quiescent current of 60mA reducing power drain on the system battery. No switching is required between high and low output power levels. The 6mm x 6mm laminate package is self contained, incorporating 50W i

The AWT6105 is a high power, high efficiency amplifier module for Dual Mode CDMA/AMPS wireless handset applications. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability and ruggedness. A low power quiescent current mode is digitally controlled to reduce power drain on the system battery. The 6mm x 6mm laminate package is self contained, incorporating 50W input and output matching networks optimized for output power, lin

AGC Transimpedance Amplifier SONET OC-3

The AGB3303 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, low noise and low distortion. No external matching components are needed for insertion into a 50? system. With a high output IP3, low noise figure and wide band operation, the AGB3303 is ideal for wireless infrastructure applications such as Cellular Base Stations, MMDS, and WLL. Offered in a low cost SOT-89 surface mount package, the AGB3303 requires a single sup

DESCRIPTIONS7 Package16 Pin Wide Body SOICwith Heat SlugInput2A1AACA24022Data Sheet - Rev 2.212/2008ACA2402Figure 2: Pin OutTable 1: Pin Description12345678161514131211109I2A1ATT2AT1AT1APINNAMEDESCRIPTIONPINNAMEDESCRIPTION11622A151A31441A132A512611171089Data Sheet - Rev 2.212/20083ACA2402Table 2: Absolute Mimimum and Maximum RatingsELECTRICAL CHARACTERISTICSStresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure

The 2.2PD series of detectors is based on GaInAsSb/GaAlAsSb heterostructure technology. Spectral sensitivity lies between 1 and 2.4 mm, and peak response of 1 A/W occurs at about 2.2mm. Operation can be photovoltaic or photoconductive, and pulsed or CW. Price/performance compared to extended wavelength InGaAs is superior due to the high shunt resistance and low price. Standard packaging includes TO-18 and TO-5 headers.

The AWT6137 CDMA/AMPS Power Amplifier is a high performance CDMA2000/ 1XRTT amplifier designed specifically for Cellular wireless applications. This rugged, easy to use InGaP HBT design delivers state of the art efficiency and temperature stability with very low DC power consumption. The AWT6137 PA module has the lowest CDG currents available to handset manufacturers today.

The ABA3100 is a monolithic IC intended for use in applications requiring high linearity, such as Cellular Telephone Base Station Driver Amplifiers, CATV Fiber Receiver and Distribution Amplifiers, CATV Drop Amplifiers, CATV Set Top Boxes and Home Gateways

The 13PD55-TO, an InGaAs photodiode with a 55µm-diameter photosensitive region and packaged in a TO- 46 header, is intended for high speed and low noise applications in telecommunications and data communications systems. Planar semiconductor design and dielectric passivation provide very low noise performance. Reliability is assured by hermetic sealing and 100% purge burn-in (200°C, 15 hours, Vr = 20V). Headers are available with either a lensed or flat window c

The ANADGICS ATA01504 is a 5V low noise transimpedance amplifier with AGC designed to be used in OC-3/STM-1 fiber optic links. The device is used in conjuction with a photodetector (PIN diode or avalanche photodiode) to convert an optical signal into an output voltage.