FEATURES 5 60V, 5.6A, RDS(ON) = 45m @VGS = 10V. RDS(ON) = 75m @VGS = 4.5V. -60V, -3.3A, RDS(ON) = 130m @VGS = -10V. RDS(ON) = 180m @VGS = -4.5V. D1 D1 D2 D2 Super high dense cell design for extremely low RDS(ON). 8 7 6 5 High power and current handing capability. Lead free product is acquired. DIP-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel P-Channel Units Drain-Source Voltage VDS 60 -60 V Gate-Source Voltage VGS ±20 &plusmn

FEATURES -30V, -7.9A, RDS(ON) = 24m @VGS = -10V. RDS(ON) = 40m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -7.9 A a Drain Current-Pulsed IDM -25 A Maximum

FEATURES 40V, 24A, RDS(ON) = 30m @VGS = 10V. RDS(ON) = 45m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G G D S S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 24 A Drain Current-

FEATURES Type VDSS RDS(ON) ID @VGS CEP01N6 650V 15 1A 10V CEB01N6 650V 15 1A 10V CEI01N6 650V 15 1A 10V CEF01N6 650V 15 1A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. D G G G G G D D D S S S S CEB SERIES CEI SERIES CEP SERIES CEF SERIES S TO-263(DD-PAK) TO-262(I2-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unles

FEATURES 25V, 38A, RDS(ON) = 13m @VGS = 10V. RDS(ON) = 20m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G G D S S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 38 A a Drain Curren

FEATURES -20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 80m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 TSOP-6 S(4) ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID -4.8 A a Drain Current-Pulsed IDM -19.2 A Maximum Power Dissipation PD 2.0 W Ope

FEATURES Type VDSS RDS(ON) ID @VGS CEP1175 650V 1 10A 10V CEB1175 650V 1 10A 10V CEF1175 650V 1 10A e 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. G D G G G D D S S S S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V e D

FEATURES-30V, -4.9A, RDS(ON) = 53mW @VGS = -10V. RDS(ON) = 95mW @VGS = -4.5V.Super hig dense cell design for extremely low RDS(ON).High power and current handing capability.Surface mount Package.ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameterymbolLimitUnitsDrain-Source VoltageGate-Source VoltageDrain Current-ContinuousDrain Current-Pulsed aMaximum Power Dissipation VDSVGSIDPDIDM-302.0-30-4.9 20VWAAV5 - 131SO-81D1 D1 D2 D2S1 G1 S2 G287651234Lead free product is acquired.1999.Ap

FEATURES 5 30V, 9A, RDS(ON) = 16m @VGS = 10V. RDS(ON) = 23m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 9 A a Drain Current-Pulsed IDM 36 A Maximum P

FEATURES -30V, -47A, RDS(ON) =20m @VGS = -10V. RDS(ON) =32m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. D G G G D S S CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -47 A a Drain Current-