FEATURES-20V, -4.8A, RDS(ON) = 55mW @VGS = -4.5V. RDS(ON) = 80mW @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.TSOP-6 package.ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameterSymbolLimitUnitsDrain-Source VoltageGate-Source VoltageDrain Current-ContinuousDrain Current-Pulsed aMaximum ower Dissipation VDSVGSIDPDIDM-202.0-19.2-4.8 12VWAAV1S(4)G(3)D(1,2,5,6,)TSOP-6Lead free productis acquired.2005.Junehttp://www.cetsemi.com312465Operating and Stor

FEATURES Type VDSS RDS(ON) ID @VGS CEP09N7A 700V 1.2 8A 10V CEB09N7A 700V 1.2 8A 10V CEF09N7A 700V 1.2 8A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G G G G D D S S S S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS ±30

FEATURES D1 D2 5 20V, 7.5A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 25m @VGS = 4.5V. G1 G2 RDS(ON) = 40m @VGS = 2.5V. -20V, -4A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 100m @VGS = -4.5V. S1 S2 RDS(ON) = 150m @VGS = -2.5V. D1 D1 D2 D2 Super high dense cell design for extremely low RDS(ON). 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 1 2 3 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel

FEATURESSuper high dense cll design for extremely low RDS(ON).High power and current handing capability.TO-220 & TO-263 package & TO-220F full-pak for through hole.ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameterSymbolLimitUnitsDrain-Source VoltageGate-Source Voltagerain Current-ContinuousDrain Current-Pulsed aMaximum Power Dissipation @ TC = 25 C- Derate above 25 CVDSVGSIDPDIDM f751.3320034486 20VWAAVW/ C1SGDGSDCEB SERIESTO-263(DD-PAK)SGCEP SERIESTO-220CEF SERIESTO-220

FEATURES -40V, -6.3A, RDS(ON) = 44m @VGS = -10V. RDS(ON) = 68m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-223 package. G D S D G SOT-223 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -6.3 A a Drain Current-Pulsed IDM -25 A Maximum Power Dissipation PD 3 W Operating and Store Temper

FEATURES 55V, 108.5A, RDS(ON) = 8.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. D G G G D S S CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 55 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 108.5 A Drain Current-Pulsed a IDM 434 A Maximum

FEATURES 5 40V, 6.1A, RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V. -40V, -5.2A, RDS(ON) = 43m @VGS = 10V. RDS(ON) = 65m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Channel 1 Channel 2 Units Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS

FEATURES 100V, 11A, RDS(ON) = 180m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G G D S S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 11 A Drain Current-Pulsed a IDM 44 A Maximu

FEATURES Type VDSS RDS(ON) ID @VGS CEP658N 180V 0.22 16A 10V CEB658N 180V 0.22 16A 10V d CEF685N 180V 0.22 16A 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. D G G G G D D S S S S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 180 V Gate-Source Voltage VGS &plusmn

FEATURES 5 30V, 12A, RDS(ON) = 12m @VGS = 10V. RDS(ON) = 17m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 12 A Drain Current-Pulsed a IDM 48 A Maximum Power D