FEATURES -40V, -4.6A, RDS(ON) = 66m @VGS = -10V. RDS(ON) = 105m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -4.6 A Drain Current-Pulsed a IDM -18 A Maximum

FEATURESSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameterSymbolLimitUnitsDrain-Source VoltageGate-Source VoltageDrain Current-ContinuousDrain Current-Pulsed aMaximum Power Dissipation @ TC = 25 C- Derate above 25 CVDSVGSIDPDIDM f4501.01254010 30VWAAVW/ C4 - 50SGDGSDCEB SERIESTO-263(DD-PAK)SDGCEP SERIESTO

FEATURES Type VDSS RDS(ON) ID @VGS CEP840N 500V 0.85 8A 10V CEB840N 500V 0.85 8A 10V CEF840N 500V 0.85 8A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G D G G G D D S S S S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30

FEATURES 5 -60V, -3.8A, RDS(ON) = 86m @VGS = -10V. RDS(ON) = 125m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -3.8 A Drain Current-Pulsed a IDM -15

FEATURES-30V, -4.6A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 90mW @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.TSOP-6 package.ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameterSymbolLimitUnitsDrain-Source VoltageGate-Source VoltageDrain Current-Continuousrain Current-Pulsed aMaximum Power Dissipation VDSVGSIDPDIDM-302.0-18.4-4.6 20VWAAV1S(4)G(3)D(1,2,5,6,)TSOP-6Lead free product is acquired.http://www.cetsemi.comRev 1. 2005.OctoberOperating and S

FEATURES 100V, 3A, RDS(ON) = 200m @VGS = 10V. RDS(ON) = 280m @VGS = 6V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-223 package. G D S D G SOT-223 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 3 A a Drain Current-Pulsed IDM 12 A Maximum Power Dissipation PD 3 W Operating and Store Temperature Ran

FEATURES 20V, 4.5A, RDS(ON) = 33m @VGS = 4.5V. RDS(ON) = 40m @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G SOT-23 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Drain Current-Continuous ID 4.5 A a Drain Current-Pulsed IDM 13.5 A Maximum Power Dissipation PD 1.25 W Operating and Store Temperature

FEATURES 5 30V, 6.2A, RDS(ON) = 38m @VGS = 10V. RDS(ON) = 52m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D D D 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 6.2 A a Drain Current-Pulsed IDM 25 A Maximum Power

FEATURES 120V, 10A, RDS(ON) = 120m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G G D S S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 120 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 10 A Drain Current-Pulsed a IDM 40 A Maximum

FEATURES Type VDSS RDS(ON) ID @VGS CEP04N7G 700V 3.3 4A 10V CEB04N7G 700V 3.3 4A 10V CEF04N7G 700V 3.3 4A d 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. D G G G G D D S S S S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS ±30