FEATURES D1 D2 5 20V, 7.5A, RDS(ON) = 22m @VGS = 10V. RDS(ON) = 25m @VGS = 4.5V. G1 G2 RDS(ON) = 40m @VGS = 2.5V. -20V, -4A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 100m @VGS = -4.5V. S1 S2 RDS(ON) = 150m @VGS = -2.5V. D1 D1 D2 D2 Super high dense cell design for extremely low RDS(ON). 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 1 2 3 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel

FEATURES 20V, 42A, RDS(ON) = 18m @VGS = 4.5V. RDS(ON) = 25m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. G D G G D S S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 42 A a Drain Curre

FEATURES 55V, 108.5A, RDS(ON) = 8.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. D G G G D S S CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 55 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 108.5 A Drain Current-Pulsed a IDM 434 A Maximum

FEATURES 5 40V, 6.1A, RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V. -40V, -5.2A, RDS(ON) = 43m @VGS = 10V. RDS(ON) = 65m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Channel 1 Channel 2 Units Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS

FEATURES -40V, -20A, RDS(ON) = 42m @VGS = -10V. RDS(ON) = 65m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G G D S S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -20 A Drain Cu

FEATURES Type VDSS RDS(ON) ID @VGS CEP658N 180V 0.22 16A 10V CEB658N 180V 0.22 16A 10V d CEF685N 180V 0.22 16A 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. D G G G G D D S S S S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 180 V Gate-Source Voltage VGS &plusmn

FEATURES 5 30V, 5.8A, RDS(ON) = 37m @VGS = 10V. RDS(ON) = 55m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 5.8 A a Drain Current-Pulsed IDM 30 A Maxim

FEATURES 30V, 65A, RDS(ON) = 7.8m(typ) @VGS = 10V. RDS(ON) = 10m(typ) @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G G D S S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 65 A a D

FEATURES Type VDSS RDS(ON) ID @VGS CEPF630B 200V 0.4 9A 10V CEBF630B 200V 0.4 9A 10V CEIF630B 200V 0.4 9A 10V CEFF630B 200V 0.4 9A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. D G G G G G D D D S S S S S CEB SERIES CEI SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-262(I2-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25

FEATURES 5 20V, 6A, RDS(ON) = 20m @VGS = 4.5V. RDS(ON) = 30m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 6 A a Drain Current-Pulsed IDM 24 A Maximum