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N-Channel Enhancement Mode Field Effect Transistor

FEATURESSuper high dense cll design for extremely low RDS(ON).High power and current handing capability.TO-220 & TO-263 package & TO-220F full-pak for through hole.ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameterSymbolLimitUnitsDrain-Source VoltageGate-Source Voltagerain Current-ContinuousDrain Current-Pulsed aMaximum Power Dissipation @ TC = 25 C- Derate above 25 CVDSVGSIDPDIDM f751.3320034486 20VWAAVW/ C1SGDGSDCEB SERIESTO-263(DD-PAK)SGCEP SERIESTO-220CEF SERIESTO-220

Relevant Keywords: 
CEF85N75, TO-263, SERIESTO-220CEF, C1SGDGSDCEB, TO-220F, RJC2, C100100ms, TO-220-263-N, P85N75(F), C-55, TJM-TC, CTJ175, A-50-250255075100125150IS, SERIESTO-263(DD-PAK)SGCEP

no title - download PDF datasheet, node 170695

FEATURES -40V, -6.3A, RDS(ON) = 44m @VGS = -10V. RDS(ON) = 68m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-223 package. G D S D G SOT-223 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -6.3 A a Drain Current-Pulsed IDM -25 A Maximum Power Dissipation PD 3 W Operating and Store Temper


no title - download PDF datasheet, node 170686

FEATURES -30V, -3.6A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 90m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package. G D S G SOT-23 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -3.6 A a Drain Current-Pulsed IDM -14.4 A Maximum Power Dissipation PD 1.25 W Operating and Store Tempe


no title - download PDF datasheet, node 170606

FEATURES 5 20V, 6A, RDS(ON) = 30m @VGS = 4.5V. RDS(ON) = 40m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V Drain Current-Continuous ID 6 A a Drain Current-Pulsed IDM 35 A Maximum


no title - download PDF datasheet, node 170526

FEATURES 60V, 3.7A, RDS(ON) = 100m @VGS = 10V. RDS(ON) = 120m @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-89 package. G D S D G SOT-89 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 3.7 A a Drain Current-Pulsed IDM 25 A Maximum Power Dissipation PD 3 W Operating and Store Temperature R


no title - download PDF datasheet, node 170711

FEATURES 100V, 11A, RDS(ON) = 180m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G G D S S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 11 A Drain Current-Pulsed a IDM 44 A Maximu


no title - download PDF datasheet, node 170622

FEATURES 650V, 4.5A, RDS(ON) = 2.4 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-220 & TO-263 package. D G G G D S S CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V Drain Current-Continuous ID 4.5 A Drain Current-Pulsed a IDM 18 A Maximum Pow


no title - download PDF datasheet, node 170542

FEATURES -20V, -6A, RDS(ON) = 44m @VGS = -4.5V. RDS(ON) = 65m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID -6 A Drain Current-Pulsed a IDM -20 A Maximum Pow


no title - download PDF datasheet, node 170727

FEATURES -30V, -18A, RDS(ON) = 45m @VGS = -10V. RDS(ON) = 80m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G G D S S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -18 A a Drain


no title - download PDF datasheet, node 170638

FEATURES 30V, 105A,RDS(ON) = 6m @VGS = 10V. RDS(ON) = 8m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. D G G G D S S CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 105 A Drain Current-Pulsed


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