FEATURES 55V, 108.5A, RDS(ON) = 8.5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. D G G G D S S CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 55 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 108.5 A Drain Current-Pulsed a IDM 434 A Maximum

FEATURES 5 40V, 6.1A, RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V. -40V, -5.2A, RDS(ON) = 43m @VGS = 10V. RDS(ON) = 65m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Channel 1 Channel 2 Units Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS

FEATURES -30V, -25A, RDS(ON) = 36m @VGS = -10V. RDS(ON) = 57m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G G D S S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -25 A a Drain

FEATURES Type VDSS RDS(ON) ID @VGS CEP658N 180V 0.22 16A 10V CEB658N 180V 0.22 16A 10V d CEF685N 180V 0.22 16A 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. D G G G G D D S S S S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 180 V Gate-Source Voltage VGS &plusmn

FEATURES 5 30V, 12A, RDS(ON) = 12m @VGS = 10V. RDS(ON) = 17m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 12 A Drain Current-Pulsed a IDM 48 A Maximum Power D

FEATURES 30V, 65A, RDS(ON) = 7.8m(typ) @VGS = 10V. RDS(ON) = 10m(typ) @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G G D S S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 65 A a D

FEATURES Type VDSS RDS(ON) ID @VGS CEPF630 200V 0.35 10A 10V CEBF630 200V 0.35 10A 10V CEFF630 200V 0.35 10A d 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. D G G G G D D S S S CEB SERIES CEP SERIES CEF SERIES S TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS &plusmn

FEATURES 100V, 2.6A, RDS(ON) = 190m @VGS = 10V. -100V, -2.0A, RDS(ON) = 320m @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel P-Channel Units Drain-Source Voltage VDS 100 -100 V Gate-Source Voltage VGS ±20 ±20 V Drain Current-Continuous

FEATURES-30V, -7.9A, RDS(ON) = 20mW @VGS = -10V. RDS(ON) = 33mW @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Surface mount Package.ABSOLUTE MAXIMUM RATINGS TA = 25C unless otherwise notedParameterSymbolLimitUnitsDrain-Source VoltageGate-Source VoltageDrain Current-ContinuousDrain Current-Pulsed aMaximum Power Dissipation VDSVGSIDPDIDM-302.0-31.6-7.9 20VWAAV5 - 147SO-81D1 D1 D2 D2S1 G1 S2 G287651234Lead free product is acquired.http

FEATURES 5 30V, 7A, RDS(ON) = 30m @VGS = 10V. RDS(ON) = 42m @VGS = 4.5V. -30V, -3.5A, RDS(ON) = 100m @VGS = -10V. RDS(ON) = 160m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel P-Channel Units Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VG