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P-Channel Enhancement Mode Field Effect Transistor

FEATURES-30V, -15A, RDS(ON) = 70mW @VGS = -10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.TO-251 & TO-252 package.ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameterSymbolLimitUnitsDrain-Source VoltageGate-Source VoltageDrain Current-ContinuousDrain Current-Puled aMaximum Power Dissipation @ TC = 25 C- Derate above 25 CVDSVGSIDPDIDM-300.2942-45-15 20VWAAVW/ C6 - 14SGDCEU SERIESTO-252(D-PAK)CED SERIESTO-251(I-AK)GGSSDDPRELIM

Relevant Keywords: 
CCED05P03/CEU05P034, TJM-TA, CTJ175, U05P03, C1SGDCEU, SERIESTO-252(D-PAK)CED, CED05P03/CEU05P036, TO-252, C-55, SERIESTO-251(I-PAK)GGSSDD, CED05P03/CEU05P033, TO-251-252-P, AVS6, RJC2, CCED05P03/CEU05P036, TJM-TC, A-50-250255075100125150-IS, RJA2

no title - download PDF datasheet, node 170691

FEATURES -20V, -4.2A, RDS(ON) = 48m @VGS = -4.5V. RDS(ON) = 65m @VGS = -2.5V. RDS(ON) = 95m @VGS = -1.8V. High dense cell design for extremely low RDS(ON). D Rugged and reliable. Lead free product is acquired. SOT-23 package. G D S G SOT-23 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Drain Current-Continuous ID -4.2 A Drain Current-Pulsed a IDM -15 A Maximum Power Dissipation PD 1.25 W


no title - download PDF datasheet, node 170614

FEATURES Type VDSS RDS(ON) ID @VGS CEP01N6 650V 15 1A 10V CEB01N6 650V 15 1A 10V CEI01N6 650V 15 1A 10V CEF01N6 650V 15 1A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. D G G G G G D D D S S S S CEB SERIES CEI SERIES CEP SERIES CEF SERIES S TO-263(DD-PAK) TO-262(I2-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unles


no title - download PDF datasheet, node 170534

FEATURES -20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 80m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 TSOP-6 S(4) ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID -4.8 A a Drain Current-Pulsed IDM -19.2 A Maximum Power Dissipation PD 2.0 W Ope


no title - download PDF datasheet, node 170707

FEATURES 700V, 3.5A, RDS(ON) = 3.3 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G G D S S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS ±30 V Drain Current-Continuous ID 3.5 A Drain Current-Pulsed a IDM 14 A Maxim


no title - download PDF datasheet, node 170630

FEATURES Type VDSS RDS(ON) ID @VGS CEP1175 650V 1 10A 10V CEB1175 650V 1 10A 10V CEF1175 650V 1 10A e 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. G D G G G D D S S S S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V e D


no title - download PDF datasheet, node 170550

FEATURES 5 30V, 9A, RDS(ON) = 16m @VGS = 10V. RDS(ON) = 23m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 D2 D2 Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 9 A a Drain Current-Pulsed IDM 36 A Maximum P


no title - download PDF datasheet, node 170723

FEATURES 30V, 36A , RDS(ON) = 15m @VGS = 10V. RDS(ON) = 22m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G G D S S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 36 A a Drain Curre


no title - download PDF datasheet, node 170646

FEATURES -30V, -47A, RDS(ON) =20m @VGS = -10V. RDS(ON) =32m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. D G G G D S S CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -47 A a Drain Current-


no title - download PDF datasheet, node 170566

FEATURES -30V, -9.3A, RDS(ON) = 18m @VGS = -10V. RDS(ON) = 30m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D D D Lead free product is acquired. 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S S S G ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -9.3 A a Drain Current-Pulsed IDM -37 A Maximum


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