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HiSincerity Mocroelectronics
NPN EPITAXIAL PLANAR TRANSISTOR
The H2N6718L is designed for general purpose medium power amplifier and switching applications
N-CHANNEL POWER MOSFET
This power MOSFET is designed for low voltage,high speed power switching applications such as switching regulators,conveters,solenoid and relay drivers.
NPN EPITAXIAL PLANAR TRANSISTOR
The HJ882 is designed for using in output stage of 20W audio amplifier,voltage regulator,DC-DC converter and relay driver.
NPN EPITAXIAL PLANAR TRANSISTOR
Switch Regulators.Deflection Circuits.
N-Channel Enhancement Mode MOSFET(25V,50A)
R(DS)(on)=11mohm@V(GS)=10V,I(D)=30A,R(DS)(on)=18mohm@V(GS)=4.5V,I(D)=30A,Advanced trench process technology
NPN EPITAXIAL PLANAR TRANSISTOR
The HI10387 is designed for general purpose amplifier and low speed switching applications.
NPN EPITAXIAL PLANAR TRANSISTOR
Darlington Amplifier Transistor
N-Channel Power Field Effect Transistor
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time
NPN EPITAXIAL PLANAR TRANSISTOR
The HSD882S is suited for the output stage of 0.75w amplifier, voltage regulator, and relay driver.
COMPLEMENTARY SILICON POWER TRANSISTORS
The HBD437D is silicon epitaxial-base NPN power transistor in TO-126ML plastic package,intended for use in medium power linear and switching applications