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HiSincerity Mocroelectronics
hsmc.com.tw
NPN EPITAXIAL PLANAR TRANSISTOR
The HMBT3904 is designed for general purpose switching amplifier applications.
Relevant Keywords:
HMBT3904
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N-Channel Power Field Effect Transistor(600V,4A)
This advanced high voltage MOSFET is designed to withstand energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain-to-source diode with fast recovery time
Relevant Keywords:
H04N60
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PNP EPITAXIAL PLANAR TRANSISTOR
The HTIP117D is designed for use in general purpose amplifier and low-speed switching applications.
Relevant Keywords:
HTIP117D
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NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
The HD122 is designed for medium power linear and switching applications
Relevant Keywords:
HD122
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NPN EPITAXIAL PLANAR TRANSISTOR
The HM3669 is designed for using in power amplifier applications,power switching application.
Relevant Keywords:
HM3669
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PNP EPITAXIAL PLANAR TRANSISTOR
Low frequency power amplifier.
Relevant Keywords:
HSB857J
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NPN EPITAXIAL PLANAR TRANSISTOR
The HBC546 is Primarily intended for use in driver stage of audio amplifiers
Relevant Keywords:
HBC546
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High-Speed Switching Diode
The HMBD4148 id designed for high-speed switching application in hybrid thick-and thin film circuits.
Relevant Keywords:
HMBD4148
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NPN EPITAXIAL PLANAR TRANSISTOR
The HPN2222A is designed for general purpose amplifier, high speed switching,medium-power switching applications.
Relevant Keywords:
HPN2222A
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3 TERMINAL POSITIVE VOLTAGE REGULATORS
These regulators employ internal current limiting and thermal shut down making them essentially indestructible
Relevant Keywords:
H78LXXBM, H78LXXBA, H78LXXAM, H78LXXAA
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