The IRUH50P253B1M is a space qualified, ultra low dropout linear regulator designed specifically for space applications. This product has been characterized to a total ionizing dose of 1.0 Mrad(Si) per MIL-STD-883, Method 1019 at both high and low dose rates under biased and unbiased conditions to account for ELDRS effects in bipolar devices. The ultra low dropout voltage of 0.4V@ 3A makes the part particularly useful for applications requiring low noise and higher efficiency.

specifications subject to change without notice.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at www.irf.com for sales contact information. 02/05 LINE CEXAMPLE:LOT CODE 1789ASSEMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C"WITH ASSEMBLY THIS IS AN IRC640 LOT CODEASSEMBLYINTERNATIONALRECTIFIERLOGOIRC6401789719CDATE CODEYEAR 7 = 1997PART NUMBERWEEK 19 www.irf.com 1 IRCZ44PbF 2 www.irf.com www.irf.com

Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated to 10µs @125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package

Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designerwith an extremely efficient and reliable device for usein a wide variety of applications.

The ASF461 EMI filter will reduce the input line reflectedripple current of the ASA line of DC/DC convertersto levels below the CEO3 limits of MIL-STD-461.

specifications subject to change without notice.8/97Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ IRFZ34N Parameter Min. Typ.Max.Units ConditionsIS

This power module includes an IGBT power transistor which features a high impedance insulated gate and the low on-resistance characteristics of bipolar transistor with a free wheeling diode connected across the emitter and collector.

Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designerwith an extremely efficient device for use in a widevariety of applications

The PVD33 Series DC Relay (PVD) is a single-pole, normally open, solid-state replacement for electromechanical relays used for general purpose switching of analog signals.

Description/FeaturesThe 20ETS.. rectifier SAFE IR series has beenoptimized for very low forward voltage drop, withmoderate leakage. The glass passivationtechnology used has reliable operation up to150 C junction temperature.Typical applications are in input rectification andthese products are designed to be used withInternational Rectifier Switches and OutputRectifiers which are available in identical package outlines.Capacitive input filter TA = 55 C, TJ = 125 C,16.321Acommon heatsink of 1 C/WP