Linear Integrated Systems
N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED
The SD211DE/SST211 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD211 may be used for ±5-V analog switching or as a high speed driver of the SD214. The SD214 is normally used for ±10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. An integrated Zener diode provides ESD protection. These devices feature a poly-s
LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
LOW DRIFT |?VGS1-2 /?T|= 5µV/°C max.LOW LEAKAGE I G = 20pA TYP.LOW NOISE en= 10nV/?Hz TYP.
CURRENT REGULATING DIODES
SECOND SOURCE FOR SILICONIX J500 SERIES WIDE CURRENT RANGE 0.192 to 5.6mA BIASING NOT REQUIRED VGS = 0V
PICO AMPERE DIODES
DIRECT REPLACEMENT FOR SILICONIX PAD SERIES REVERSE BREAKDOWN VOLTAGE BVR ? -30V REVERSE CAPACITANCE Crss ? 2.0pF
SINGLE P-CHANNEL JFET SWITCH
Direct Replacement For SILICONIX J/SST174 SERIES LOW ON RESISTANCE rDS(on) ? 85? LOW GATE OPERATING CURRENT ID(off) = 10pA
ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET
LOW POWER I DSS<90 µA (2N4117) MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series)
LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
LOW DRIFT |VGS1_2/T|=10uV/°CTYP. LOW NOISE en=6nV/Hz@10HzTYP. LOW PINCHOFF Vp= 2.5V TYP.
MONOLITHIC DUAL NPN TRANSISTORS
Direct Replacement for Intersil IT120 Series Pin for Pin Compatible
LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET
LOW NOISE en= 8nV/?Hz TYP.LOW LEAKAGE I G = 10pA TYP.LOW DRIFT |?VGS1-2 /?T|= 5µV/°C max.LOW OFFSET VOLTAGE IVGS1-2 I= 2mV TYP.
CURRENT REGULATING DIODES
SECOND SOURCE FOR SILICONIX SST502 SERIES WIDE CURRENT RANGE 0.43 to 4.7mA BIASING NOT REQUIRED VGS = 0V