HIGH SWITCHING SPEED tON = 2.0ns LOW ON RESISTANCE rDS(ON) = 5? LOW GATE NODE CAPACITANCE C = 25pF LOW GATE LEAKAGE CAPACITANCE I = 0.05µA

DIRECT REPLACEMENT FOR INTERSIL ID100 & ID101 REVERSE LEAKAGE CURRENT IR = 0.1pA REVERSE BREAKDOWN VOLTAGE BVR ? 30V REVERSE CAPACITANCE Crss = 0.75pF

The SD210DE/214DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD214DE is normally used for ±10-V analog switching. These MOSFETs utilize lateralconstruction to achieve low capacitance and ultra-fast switching speeds. These MOSFETs do not have a gate protection Zener diode which results in lower gate leakage and ± voltage capability from gate to substrate. A poly-silicon gate

Direct Replacement for Intersil IT120 Series Pin for Pin Compatible

Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds(on) ? 200? FAST SWITCHING td(on) ? 3.0ns

SECOND SOURCE FOR SILICONIX SST502 SERIES WIDE CURRENT RANGE 0.43 to 4.7mA BIASING NOT REQUIRED VGS = 0V

VERY HIGH GAIN hFE ? 200 @ 10µA-1mA TIGHT VBE MATCHING |VBE1 -VBE2 | = 0.2mV TYP. HIGH f T 250MHz TYP. @ 1mA

Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 LOW ON RESISTANCE rDS(on) ? 30? FAST SWITCHING tON ? 15ns

LOW DRIFT |VGS1_2/T|=10uV/°CTYP. LOW NOISE en=6nV/Hz@10HzTYP. LOW PINCHOFF Vp= 2.5V TYP.

DIRECT REPLACEMENT FOR SILICONIX J/SST201 SERIES LOW CUTOFF VOLTAGE VGS(off) ? 1.5V HIGH GAIN AV = 80 V/V