Linear Integrated Systems
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LOW NOISE SINGLE N-CHANNEL JFET SWITCH
Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A LOW ON RESISTANCE rDS(on) ? 8? FAST SWITCHING tON ? 4ns
Relevant Keywords:
SST109, SST108, J/SST110 , J/SST109, SST110, J/SST108
Related Datasheets:
CURRENT REGULATING DIODES
SECOND SOURCE FOR SILICONIX J500 SERIES WIDE CURRENT RANGE 0.192 to 5.6mA BIASING NOT REQUIRED VGS = 0V
Relevant Keywords:
J506, J500
Related Datasheets:
MONOLITHIC DUAL NPN TRANSISTORS
6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 2mV EXCELLENT THERMAL TRACKING1 3µV/°C
Relevant Keywords:
LS3250C, LS3250B, LS3250A, LS3250
Related Datasheets:
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
HIGH INPUT IMPEDANCE IG=0.25pA MAXHIGH GAIN gfs=120µmho MIN LOW POWER OPERATION VGS(off) =2V MAX
Relevant Keywords:
LS425, LS424, LS423, LS422, LS426, LS421
Related Datasheets:
LOW NOISE SINGLE N-CHANNEL JFET SWITCH
Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A LOW ON RESISTANCE rDS(on) ? 8? FAST SWITCHING tON ? 4ns
Relevant Keywords:
J/SST108
Related Datasheets:
MONOLITHIC DUAL PICO AMPERE DIODES
Direct Replacement For SILICONIX DPAD SERIES HIGH ON ISOLATION 20fA EXCELLENT CAPACITANCE MATCHING ?CR ? 0.2pF
Relevant Keywords:
DPAD2, DPAD100, DPAD50, DPAD10, DPAD5, DPAD1, DPAD20, DPAD
Related Datasheets:
ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
ULTRA LOW DRIFT |?VGS1-2 /?T|= 5µV/°C max.ULTRA LOW LEAKAGE IG = 80fA TYP.LOW NOISE en= 70nV/?Hz TYP.LOW CAPACITANCE CISS= 3pf MAX
Relevant Keywords:
LS831, LS830 , LS833, LS833, LS831, LS832, LS832
Related Datasheets:
HIGH SPEED N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED
HIGH SWITCHING SPEED tON = 2.0ns LOW ON RESISTANCE rDS(ON) = 5? LOW GATE NODE CAPACITANCE C = 25pF LOW GATE LEAKAGE CAPACITANCE IG(ON) = 0.05µA
Relevant Keywords:
SST824, SST823
Related Datasheets:
MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE
Relevant Keywords:
3N166, 3N165
Related Datasheets:
LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER
HIGH GAIN gfs = 7000µmho MINIMUM (J211, J212) HIGH INPUT IMPEDANCE I GSS= 100pA MAXIMUM LOW INPUT CAPACITANCE Ciss = 5pF TYPICAL
Relevant Keywords:
J212, J211, J210
Related Datasheets:
