Linear Integrated Systems
SINGLE N-CHANNEL JFET SWITCH
Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 LOW ON RESISTANCE rDS(on) ? 30? FAST SWITCHING tON ? 15ns
SINGLE N-CHANNEL JFET SWITCH
Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 LOW ON RESISTANCE rDS(on) ? 30? FAST SWITCHING tON ? 15ns
MONOLITHIC DUAL NPN TRANSISTORS
VERY HIGH GAIN hFE ? 200 @ 10µA-1mA TIGHT VBE MATCHING |VBE1 -VBE2 | = 0.2mV TYP.HIGH f T 250MHz TYP. @ 1mA
LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
LOW DRIFT |VGS1_2/T|=10uV/°CTYP. LOW NOISE en=6nV/Hz@10HzTYP. LOW PINCHOFF Vp= 2.5V TYP.
IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET
Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE (10kHz) en ~ 4nV/?Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ? 4000µS
LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER
HIGH GAIN gfs = 7000µmho MINIMUM (J211, J212) HIGH INPUT IMPEDANCE I GSS= 100pA MAXIMUM LOW INPUT CAPACITANCE Ciss = 5pF TYPICAL
LOW NOISE SINGLE N-CHANNEL JFET SWITCH
Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A LOW ON RESISTANCE rDS(on) ? 8? FAST SWITCHING tON ? 4ns
CURRENT REGULATING DIODES
SECOND SOURCE FOR SILICONIX J500 SERIES WIDE CURRENT RANGE 0.192 to 5.6mA BIASING NOT REQUIRED VGS = 0V
MONOLITHIC DUAL PNP TRANSISTORS
HIGH GAIN hFE ? 200 @ 10µA - 1mA TIGHT VBE MATCHING |VBE1-VBE2 | = 0.2mV TYP.HIGH fT 275MHz TYP. @ 1mA
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
HIGH INPUT IMPEDANCE IG=0.25pA MAXHIGH GAIN gfs=120µmho MIN LOW POWER OPERATION VGS(off) =2V MAX