Direct Replacement For SILICONIX DPAD SERIES HIGH ON ISOLATION 20fA EXCELLENT CAPACITANCE MATCHING ?CR ? 0.2pF

VERY HIGH GAIN hFE ? 2000 @ 1.0µA TYP.LOW OUTPUT CAPACITANCE COBO ?2.0pF TIGHT VBE MATCHING |VBE1 -VBE2 | = 0.2mV TYP.HIGH f T 100MHz

Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE NF = 2.7dB

LOW DRIFT |?VGS1-2 /?T|= 5µV/°C max.ULTRA LOW LEAKAGE IG = 150fA TYP.LOW PINCHOFF VP= 2V TYP.

Direct Replacement For SILICONIX J/SST174 SERIES LOW ON RESISTANCE rDS(on) ? 85? LOW GATE OPERATING CURRENT ID(off) = 10pA

The SD5000/5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Built on Siliconix' proprietary DMOS process, the SD5000/5400 series utilizes lateral construction to achieve low capacitance and ultra-fast switching speeds. For manufacturing reliability, these devices feature poly-sil

The SD210DE/214DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency pplications. The SD214DE is normally used for ±10-V analog switching. These MOSFETs utilize lateral construction to achieve low apacitance and ultra-fast switching speeds. These MOSFETs do not have a gate protection Zener diode which results in lower gate leakage and ± voltage apability from gate to substrate. A poly-silicon gate

HIGH INPUT IMPEDANCE IG=0.25pA MAXHIGH GAIN gfs=120µmho MIN LOW POWER OPERATION VGS(off) =2V MAX

Direct Replacement for Intersil IT130 Series Pin for Pin Compatible

DIRECT REPLACEMENT FOR CRYSTALONICS FF627 FLAT GLASS TOP FOR EXTERNAL OPTICS ULTRA HIGH SENSITIVITY