Linear Integrated Systems
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ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET
ULTRA LOW NOISE en = 0.9nV/?Hz (typ) TIGHT MATCHING |VGS1-2| = 20mV max HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 20mS (typ) LOW CAPACITANCE 25pF typ IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389
Relevant Keywords:
LSK389C, LSK389B, LSK389A, LSK389
Related Datasheets:
MONOLITHIC DUAL N-CHANNEL JFET
Direct Replacement for SILICONIX U/SST440 & U/SST441 HIGH CMRR CMRR ? 85dB LOW GATE LEAKAGE IGSS ? 1pA
Relevant Keywords:
U/SST441", U/SST440, SST441, SST440, "U/SST440,441
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SINGLE N-CHANNEL JFET SWITCH
Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 LOW ON RESISTANCE rDS(on) ? 30? FAST SWITCHING tON ? 15ns
Relevant Keywords:
2N/PN/SST4391
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LOG CONFORMANCE MONOLITHIC DUAL NPN TRANSISTORS
LOG CONFORMANCE ?re =1? TYP.
Relevant Keywords:
LS318
Related Datasheets:
SINGLE N-CHANNEL JFET
DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING 4ns
Relevant Keywords:
SST112, SST111, J/SST113 , J/SST112, SST113, J/SST111
Related Datasheets:
ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET
LOW POWER I DSS<90 µA (2N4117)MINIMUM CIRCUIT LOADING I GSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1) -40V Gate-Current 50mA Total Device Dissipation Derate 2mW/°C to 175°C) 300mW Storage Temperature Range -65°C to +175°C Lead Temperature 1/16" from case for 10 seconds) 255°C
Relevant Keywords:
2N4118, LS4117, 2N4117A, 2N4119A, 2N4117, 2N4119, 4119, 2N4118A, 4118
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LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER
HIGH GAIN gfs = 7000µmho MINIMUM (J211, J212) HIGH INPUT IMPEDANCE I GSS= 100pA MAXIMUM LOW INPUT CAPACITANCE C = 5pF TYPICAL
Relevant Keywords:
J212, J210, J212, J211
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N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED
The SD211DE/SST211 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD211 may be used for ±5-V analog switching or as a high speed driver of the SD214. The SD214 is normally used for ±10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. An integrated Zener diode provides ESD protection. These devices feature a poly-s
Relevant Keywords:
SD213DE, SD213, SD215DE, SD211DE, SD215, SD211, SD214, SD-SST211/213/215
Related Datasheets:
SINGLE N-CHANNEL JFET
DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING 4ns
Relevant Keywords:
J/SST111
Related Datasheets:
MONOLITHIC DUAL PNP TRANSISTORS
HIGH GAIN hFE ? 200 @ 10µA - 1mA TIGHT VBE MATCHING |VBE1-VBE2 | = 0.2mV TYP.HIGH f 275MHz TYP. @ 1mA
Relevant Keywords:
LS352, LS351, LS350 , LS351
Related Datasheets:
