Linear Integrated Systems
linearsystems.com
CURRENT REGULATING DIODES
SECOND SOURCE FOR SILICONIX SST502 SERIES WIDE CURRENT RANGE 0.43 to 4.7mA BIASING NOT REQUIRED VGS = 0V
Relevant Keywords:
SST506, SST510, SST505, SST509, SST504, SST508, SST503, SST507, SST502, SST511
Related Datasheets:
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
LOW DRIFT |?VGS1-2 /?T|= 5µV/°C max.ULTRA LOW LEAKAGE IG = 150fA TYP.LOW PINCHOFF VP= 2V TYP.
Relevant Keywords:
LS5908 , LS5905 , LS5909, LS5907, LS5906
Related Datasheets:
PICO AMPERE DIODES
DIRECT REPLACEMENT FOR SILICONIX PAD SERIES REVERSE BREAKDOWN VOLTAGE BVR ? -30V REVERSE CAPACITANCE Crss ? 2.0pF
Relevant Keywords:
(SST/J)PAD20 , (SST/J)PAD500, (SST/J)PAD2 , (SST/J)PAD50 , (SST/J)PAD100, PAD100, (SST/J)PAD5, (SST/J)PAD10 , PAD10, (SST/J)PAD200, (SST/J)PAD1, PAD1
Related Datasheets:
MONOLITHIC DUAL N-CHANNEL JFET
Direct Replacement for SILICONIX U/SST440 & U/SST441 HIGH CMRR CMRR ? 85dB LOW GATE LEAKAGE IGSS ? 1pA
Relevant Keywords:
U/SST441", U/SST440, SST441, SST440, "U/SST440,441
Related Datasheets:
CURRENT REGULATING DIODES
SECOND SOURCE FOR SILICONIX J500 SERIES WIDE CURRENT RANGE 0.192 to 5.6mA BIASING NOT REQUIRED VGS = 0V
Relevant Keywords:
J509, J500
Related Datasheets:
SINGLE P-CHANNEL JFET SWITCH
Direct Replacement For SILICONIX J/SST174 SERIES LOW ON RESISTANCE rDS(on) ? 85? LOW GATE OPERATING CURRENT ID(off) = 10pA
Relevant Keywords:
SST174, J/SST177, SST177, J/SST176, SST176, J/SST175, SST175, J/SST174
Related Datasheets:
LOW NOISE SINGLE N-CHANNEL JFET SWITCH
Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A LOW ON RESISTANCE rDS(on) ? 8? FAST SWITCHING tON ? 4ns
Relevant Keywords:
J/SST108
Related Datasheets:
SINGLE N-CHANNEL HIGH FREQUENCY JFET
Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE NF = 2.7dB
Relevant Keywords:
U/J/SST308
Related Datasheets:
QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED
The SD5000/5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Built on Siliconix' proprietary DMOS process, the SD5000/5400 series utilizes lateral construction to achieve low capacitance and ultra-fast switching speeds. For manufacturing reliability, these devices feature poly-sil
Relevant Keywords:
SD5001N, SD5001, SD5000N, SD5401CY, SD5000I, SD5400CY, SD5000
Related Datasheets:
MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE
Relevant Keywords:
3N166, 3N165, 3N166, 3N165
Related Datasheets:
