Linear Integrated Systems
MONOLITHIC DUAL PNP TRANSISTORS
HIGH GAIN hFE ? 200 @ 10µA - 1mA TIGHT VBE MATCHING |VBE1-VBE2 | = 0.2mV TYP.HIGH f 275MHz TYP. @ 1mA
LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
LOW DRIFT |VGS1_2/T|=10uV/°CTYP. LOW NOISE en=6nV/Hz@10HzTYP. LOW PINCHOFF Vp= 2.5V TYP.
ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET
LOW POWER I DSS<90 µA (2N4117) MINIMUM CIRCUIT LOADING I GSS<1 pA (2N4117A Serie ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1) -40V Gate-Current 50mA Total Device Dissipation Derate 2mW/°C to 175°C) 300mW Storage Temperature Range -65°C to +175°C Lead Temperature 1/16" from case for 10 seconds) 255°C
ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
ULTRA LOW DRIFT |?VGS1-2 /?T|= 5µV/°C max.ULTRA LOW LEAKAGE IG = 80fA TYP.LOW NOISE en= 70nV/?Hz TYP.LOW CAPACITANCE CISS= 3pf MAX
LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET
LOW NOISE en= 8nV/?Hz TYP.LOW LEAKAGE I G = 10pA TYP.LOW DRIFT |?VGS1-2 /?T|= 5µV/°C max.LOW OFFSET VOLTAGE IVGS1-2 I= 2mV TYP.
CURRENT REGULATING DIODES
SECOND SOURCE FOR SILICONIX SST502 SERIES WIDE CURRENT RANGE 0.43 to 4.7mA BIASING NOT REQUIRED VGS = 0V
IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET
Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE (10kHz) en ~ 4nV/?Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ? 4000µS
PICO AMPERE DIODES
DIRECT REPLACEMENT FOR SILICONIX PAD SERIES REVERSE BREAKDOWN VOLTAGE BVR ? -30V REVERSE CAPACITANCE Crss ? 2.0pF
N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER
Direct Replacement For SILICONIX 2N/SST4416 & 2N4416A VERY LOW NOISE FIGURE (400 MHz) 4 dB (max) EXCEPTIONAL GAIN (400 MHz) 10 dB (min)
CURRENT REGULATING DIODES
SECOND SOURCE FOR SILICONIX J500 SERIES WIDE CURRENT RANGE 0.192 to 5.6mA BIASING NOT REQUIRED VGS = 0V