DESCRIPTION ORDERING INFORMATION The 2SK3357 is N-channel MOS Field Effect Transistors PART NUMBER PACKAGE designed for high current switching applications. 2SK3357 TO-3P FEATURES · Super low on-state resistance: RDS(on)1 = 5.8 m MAX. (VGS = 10 V, ID = 38 A) (TO-3P) RDS(on)2 = 8.8 m MAX. (VGS = 4.0 V, ID = 38 A) · Low Ciss: Ciss = 9800 pF TYP. · Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VG

descriptions are provided in the following user's manuals. Be sure to read them before designing. µPD780852 Subseries User's Manual: U14581E 78K/0 Series User's Manual - Instruction: U12326E FEATURES Meter controller/driver: 16 PWM outputs (8-bit resolution) Sound generator: 1 channel Internal ROM and RAM Item Program Memory Data Memory (Internal ROM) Internal High-Speed Internal Expansion LCD Display RAM Part Number RAM RAM µPD780851(A) 32 KB 1024 bytes 512 bytes 20 &tim

DESCRIPTION The µPC4064 is a low power J-FET input quad operational amplifier that will operate at voltage levels as low as ±2 V. Input current is typically less than 1mA. With input bias and offset currents as low as a few pA, the µPC4064 is an excellent choice for hand-held measurement equipment. FEATURES · Low supply current: 800 µA (TYP.) · Very low input bias and offset currents · High input impedance...J-FET Input Stage · Low supply volt

DESCRIPTION The µPC3226TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process. FEATURES · Low current : ICC = 15.5 mA TYP. @ VCC = 5.0 V · Medium output power : PO (sat) = +13.0 dBm TYP. @ f = 1.0 GHz : PO (sat) = +9.0 dBm TYP. @ f = 2.2 GHz · High linearity : PO (1dB) = +7.5 dBm TYP. @ f = 1.0 GHz : PO (1dB) = +5.7 dBm TYP

DESCRIPTION PACKAGE DIMENSION The µPA1476 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. 26.8 MAX. 4.0 FEATURES 10 · Easy mount by 0.1 inch of terminal interval. · High hFE for Darlington Transistor. MIN. · Surge Absorber (Zener Diode) built in. 2.5 ORDERING INFORMATION 1.4 2.54 1.4 0.6 ±0.1 0.5 ±0.1 Part Number Package Quality Grade µPA1476H

DESCRIPTION The µPD78P083(A) is a member of the µ PD78083 Subseries of the 78K/0 Series products. Comparing with the µPD78P083 (standard), more strict quality assurance programs are applied to this product (called Special of the quality grade in NEC). The µ PD78P083(A) uses one-time PROM instead of internal ROMs of the µ PD78081(A) and µPD78082(A). Because this device can be programmed by users, it is ideally suited for applications involving the evaluation of

DESCRIPTION ORDERING INFORMATION The 2SK3109 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent 2SK3109 TO-220AB (MP-25) switching characteristics, and designed for high voltage 2SK3109-S TO-262 (MP-25 Fin Cut) applications such as DC/DC converter. 2SK3109-ZJ TO-263 (MP-25ZJ) FEATURES · Gate voltage rating ±30 V · Low on-state resistance RDS(on) = 0.4 MAX. (VGS = 10 V, ID = 5.0 A) · Low input capacitance Ciss = 400 pF

DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system. This IC is manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migratio