DESCRIPTION The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES · Large current capacity: IC(DC) = -10 A, IC(pulse) = -15 A · High hFE and low collector saturation voltage: hFE = 200 MIN. (VCE = -2.0 V, IC = -0.5 A) VCE(sat) -0.25 V (IC = -4.0 A, IB = -0.05 A) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to base voltage VCBO

FEATURES · Low Noise, High Gain · Low Voltage Operation · Low Reverse Transfer Capacitance Cre = 0.3 pF TYP. · 4-pin minimold Package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC4957 50 pcs (Non reel) · 8 mm wide embossed taping 2SC4957-T1 3 kpcs/reel · Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMU

DESCRIPTION PACKAGE DIMENSION The µ PA1437 is PNP silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. 26.8 MAX. 4.0 FEATURES 10 · Easy mount by 0.1 inch of terminal interval. · High hFE for Darlington Transistor. 10 MIN. 2.5 ORDERING INFORMATION 1.4 Part Number Package Quality Grade 2.54 1.4 0.6 ±0.1 0.5 ±0.1 µPA1437H 10 Pin SIP Standard 1 2 3 4 5 6 7 8 9 10 Ple

specifications governing the device. 3 PRECAUTION AGAINST ESD A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it when it has occurred. Environmental control must be adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that easily build up static electricity.

The BN1A4P is designed for use in medium speed switching circuit.

DESCRIPTION µPC29L00 Series are low dropout regulators which have 100 mA capable for the output current. The variation of output voltage is 3 V, 3.3 V, 4 V and 5 V. FEATURES CONNECTION DIAGRAM · Low dropout voltage. VDIF 0.3 V (TOP VIEW) · Built-in overcurrent protection circuit. µPC29L00J Series · Built-in thermal shut-down circuit. ORDERING INFORMATION 1 2 3 Output Voltage Type Number Package 3V µPC29L03J TO-92 µPC29L03T SOT-89 OUTPUT GND INPUT 3.3

DESCRIPTION ORDERING INFORMATION The 2SC4342 is a high-speed Darlington power transistor. PART NUMBER PACKAGE This transistor is ideal for high-precision control such as PWM 2SC4342 TO-126 (MP-5) control for pulse motors or blushless of OA and FA equipment. FEATURES · On-chip C-to-E reverse diode · Fast switching speed ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO 150 V Collector to Emitter Voltage VCEO 100 V Emitter to Base Voltage VEBO 8.0 V Collector Cu

DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 µm WSi gate laterally diffused MOS FET) and housed in a surface mount package. The device can deliver 31.5 dBm output power with 62% power added efficiency at 900 MHz as AMPS final output stage amplifier under the 3.5 V supply voltage. It also can deliver 35 dBm output power with 62% power a