features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus contributing to mounting cost reduction. FEATURES · Auto-mount possible in radial taping specifications · Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions · High hFE and low VCE(sat): VCE(sat) = -0.3 V MAX. @IC

specifications governing the device. 3 PRECAUTION AGAINST ESD A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it when it has occurred. Environmental control must be adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that easily build up static electricity.

DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE Note NP109N04PUG-E1-AY Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZP) typ. 1.5 g Note NP109N04PUG-E2-AY Note Pb-free (This product does not contain Pb in external electrode). FEATURES · Super low on-state resistance RDS(on) = 2.3 m MAX. (VGS = 10 V, ID = 55 A) (TO-263) · High current rating ID(DC) = &plu

DESCRIPTION The PD168118B is a 7-channel H-bridge driver with a micro step function supporting pulse input that consists of a CMOS controller and a MOS output stage. It can reduce the current consumption and the voltage loss at the output stage compared with a conventional driver using bipolar transistors, thanks to employment of a MOS process. Moreover, at the PD168118B, micro step control up to 256 divisions can perform stepping motor drive by the pulse input, and motor can be driven by low no

DESCRIPTION The PS7801E-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side (input side) and MOS FETs on the output side. An ultra small flat-lead package has been provided which realizes a reduction in mounting area of about 50% compared with the PS72xx series. It is suitable for high-frequency signal control, due to its low C × R, low output capacitance, and low off-state leakage current. FEATURES PIN CONNECTION · Ultra small flat-lead

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE Note1, 2 NP86N04EHE-E1-AY TO-263 (MP-25ZJ) typ. 1.4 g Note1, 2 NP86N04EHE-E2-AY Pure Sn (Tin) Tape 800 p/reel Note1 NP86N04KHE-E1-AY TO-263 (MP-25ZK) typ. 1.5 g Note1 NP86N04KHE-E2-AY Note1, 2 NP86N04CHE-S12-AZ Sn-Ag-Cu TO-220 (MP-25) typ. 1.9 g Note1, 2 NP86N04DHE-S12-AY TO-262 (MP-25 Fin Cut) typ. 1.8 g T

FEATURES µ PD17704 µ PD17705 µ PD17707 µ PD17708 µ PD17709 Program memory (ROM) 16K bytes 24K bytes 32K bytes (8192 × 16 bits) (12288 × 16 bits) (16384 × 16 bits) General Purpose data 672 × 4 bits 1120 × 4 bits 1776 × 4 bits memory (RAM) · Instruction execution time · Many interrupts 1.78 µ s (with f X = 4.5-MHz crystal oscillator) External : 6 sources · PLL frequency synthesizer Internal : 6 sources Dua

DESCRIPTION The 2SJ461A is a switching device which can be driven directly by a 2.5 V power source. The 2SJ461A has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. FEATURES · Can be driven by a 2.5 V power source PACKAGE DRAWING (Unit: mm) · Not necessary to consider driving current because of its high input impedance. · Possible to reduce the number of parts by omitting the bias resistor. ORDERING INFORMATION