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NEC Electronics

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PG10626EJ02V0DS

DESCRIPTION The PG2163T5N is GaAs MMIC SPDT (Single Pole Double Throw) switch which was developed for 2.4 GHz and 6 GHz dual-band wireless LAN. This device can operate frequency from 2.4 GHz band and 6 GHz band, having the low insertion loss and high isolation. This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) package. And this package is able to high-density surface mounting. FEATURES · Operating frequency : f = 2.4 to 2.5 GHz and 4.9 to 6.0 GHz · Swit

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PG10626EJ02V0DS

D11445EJ3V0DS00, D11445EJ3V0DS

DESCRIPTION Type RD4.7SL to RD39SL Series are 2 PIN Super Mini PACKAGE DIMENSIONS (in millimeters) Mold Package zener diodes possessing an allowable power dissipation of 200 mW featuring low noise and sharp break- 0.3±0.05 2.5±0.15 1.25±0.1 down characteristic. They are intended for use in audio 1.7±0.1 equipment, instrument equipment. ;;; FEATURES · Low Noise ;; · Sharp Breakdown characteristic. Cathode 0.19 Indication · Vz: Applied E24 standard.

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D11445EJ3V0DS00, D11445EJ3V0DS

G15950EJ5V0DS00, G15950EJ5V0DS

DESCRIPTION The µPC319 is a precision high speed dual comparator designed to operate over a wide range of supply voltage down to a 5 V logic supply and ground. Further advantage, they have excellent input characteristics and direct drive capability to all the popular logic families. FEATURES · Operate from single 5 V supply · Typically 80 ns response time at ±15 V · Open collector output · Minimum fan-out of 2 each side (TTL) · High common mode sle

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G15950EJ5V0DS00, G15950EJ5V0DS

TC-2491

features a low on-resistance and excellent 5.4 ±0.25 switching characteristics, and is suitable for applications 3.65 ±0.1 such as actuator driver and DC/DC converter. 0.55 1 2 3 FEATURES 1.0 0.5 ±0.1 0.5 ±0.1 0.4 ±0.05 2.1 · New-type compact package 0.85 ±0.1 4.2 Has advantages of packages for small signals and for power transistors, and compensates those disadvan- tages Equivalent Circuit · Can be directly driven by an IC operating at 5 V

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TC-2491

D16180EJ2V0DS00, D16180EJ2V0DS

FEATURES PACKAGE DRAWING (Unit: mm) · Up to 0.7 A current drive available 2.8±0.2 · On-chip bias resistor ­0.05 0.4 +0.1 1.5 0.65 +0.1 ­0.15 · Low power consumption during drive <R> · Package: 3-pin Mini Mold (SC-59) 2 0.95 2.9±0.2 C 3 B 0.95 0.4 ­0.05 +0.1 R1 1 R2 E Marking 0.3 ­0.06 FB1 SERIES LISTS 0.16 +0.1 1.1 to 1.4 Products Marking R1 (k) R2 (k) FB1A4A P30 - 10 0 to 0.1 FB1L2Q P31 0.47 4.7 FB1A3M P32 1.0 1.0 1. Emitter (E) FB

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D16180EJ2V0DS00, D16180EJ2V0DS

S11067EJ2V0DS00

DESCRIPTION The µPD6222 is an 8-bit monolithic CMOS digital-to-analog converter using the R-2R technique. The µPD6222 incorporates a 12-channel digital-to-analog converters and I2C-bus compatible interface. The designer needs only 2 signals (Serial Data and Serial Clock) to interface and can use 8-ICs (96-channels) on same bus to control chip- select terminals. The µPD6222 incorporates Output CMOS Buffer to achieve wide output voltage range and two reference voltage terminals.

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S11067EJ2V0DS00

P12153EJ2V0DS00

FEATURES PACKAGE DRAWINGS · Low Current, High Gain (Unit: mm) |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz 2.1±0.1 |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz 1.25±0.1 · A Super Mini Mold Package Adopted · Built-in 2 Transistors (2 × 2SC5179) 0.2 +0.1 ­0 1 6 X Y 0.65 ORDERING INFORMATION 2.0±0.2 1.3 2 5 0.65 PART NUMBER QUANTITY PACKING STYLE µPA807T 3 4 Loose products Embossed tape 8 mm wide. Pin 6 (50 PCS) (Q1 Base),

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P12153EJ2V0DS00

U16890EJ2V0UD00, U16890EJ2V0UD

specifications governing the device. 3 PRECAUTION AGAINST ESD A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it when it has occurred. Environmental control must be adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that easily build up static electricity.

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U16890EJ2V0UD00, U16890EJ2V0UD

G13904EJ1V0DS00

FEATURES · Stable operation with 10000 pF capacitive load · Low noise : en = 19 nV/ Hz (TYP.) · Low input offset voltage and offset voltage null · Output short circuit protection capability · High input impedance ... J-FET Input Stage ±2.5 mV (MAX.) · Internal frequency compensation ±7 µV/°C (TYP.) temperature drift · High slew rate: 15 V/µs (TYP.) · Very low input bias and offset currents ORDERING INFORMATION

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G13904EJ1V0DS00

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