FEATURES · High-performance 32-bit architecture for · 16-bit bus fixing function incorporation use · 16-bit bus system construction · Built-in cache memory · Instructions suitable for variable application Instruction cache : 4K bytes · Sum-of-products operation Data cache : 4K bytes · Saturable operation · Built-in RAM · Branch prediction Instruction RAM : 4K bytes · Concatenation shift Data RAM : 4K bytes · Block trans

FEATURES PACKAGE DRAWING · Complementary to 2SC1623A (Unit: mm) · High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) · High Voltage: VCEO = -50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -5.0 V Collector Current (DC) IC -100 mA Total Power Dissipation PT 200 mW Junction Temperature Tj 150 °C Storage Temperature Range Tstg -55 to +150 °C 1. Emitter

DESCRIPTION The µ PD16717 is a source driver for TFT-LCDs capable of dealing with displays with 64-gray scales. Data input is based on digital input configured as 6 bits by 6 dots (2 pixels), which can realize a full-color display of 260,000 colors by output of 64 values -corrected by an internal D/A converter and 5-by-2 external power modules. Because the output dynamic range is as large as VSS2 + 0.2 V to VDD2 ­ 0.2 V, level inversion operation of the LCD's common electrode is re

DESCRIPTION The PS710E-1A and PS710EL-1A are solid state relays containing a GaAs LED on the input side and MOS FETs on the output side. It is suitable for PLC, etc. because of its large continuous load current and low on-state resistance. The PS710EL-1A has a surface mount type lead. FEATURES · Low on-state resistance (Ron = 0.08 TYP.) · Large continuous load current (IL = 2.0 A) · 1 channel type (1 a output) · Low LED operating current (IF = 2 mA) · Designed

DESCRIPTION ORDERING INFORMATION The µ PA2708GR is N-channel MOS Field Effect PART NUMBER PACKAGE Transistor designed for DC/DC converter and power management applications of notebook computer. µ PA2708GR-E1 Power SOP8 µ PA2708GR-E2 Power SOP8 Note FEATURES µ PA2708GR-E1-A Power SOP8 · Low on-state resistance µ PA2708GR-E2-A Note Power SOP8 RDS(on)1 = 5.5 m MAX. (VGS = 10 V, ID = 9.0 A) Note Pb-free (This product does not contain Pb in RDS(on)2 = 7.5 m MAX. (

DESCRIPTION ORDERING INFORMATION The 2SK3109 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent 2SK3109 TO-220AB (MP-25) switching characteristics, and designed for high voltage 2SK3109-S TO-262 (MP-25 Fin Cut) applications such as DC/DC converter. 2SK3109-ZJ TO-263 (MP-25ZJ) FEATURES · Gate voltage rating ±30 V · Low on-state resistance RDS(on) = 0.4 MAX. (VGS = 10 V, ID = 5.0 A) · Low input capacitance Ciss = 400 pF

DESCRIPTION ORDERING INFORMATION The 2SK3793 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3793 Isolated TO-220 FEATURES · Super low on-state resistance (Isolated TO-220) RDS(on)1 = 125 m MAX. (VGS = 10 V, ID = 6 A) RDS(on)2 = 148 m MAX. (VGS = 4.5 V, ID = 6 A) · Low C iss: C iss = 900 pF TYP. · Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 1

FEATURES · Maximum number of characters: 12 rows × 24 columns (288 characters) · Number of character patterns : 256 (µPD6461)/128 (µPD6462) (stored in ROM). Each pattern can be changed by specifying a mask code option. · Character size : One dot per line or one dot per two lines (field) · Number of character colors : 8 · Background : No background, minimum background, or overall background can be selected for the entire screen, together with r