DESCRIPTION Internal block functions and commands are the same as those of the PD71055. Differences between the two products are listed below. Before adopting this product, carefully read the disclaimer below and the caution in section 3 (CAUTIONS WHEN CONSIDERING ADOPTION OF THIS PRODUCT). The PD65881GB-P03 integrates an NA55A IP macro in a CMOS-N5 gate array. With three I/O ports, the gate array is capable of operations ranging from basic input/output operations to high-level operations using

DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK3576 is a switching device which can be driven directly by a 2.5 V power source. 0.4 +0.1 ­0.05 0.16+0.1 ­0.06 The device features a low on-state resistance and excellent 0.65­0.15 +0.1 switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 3 2.8 ±0.2 1.5 FEATURES 0 to 0.1 · 2.5V drive available 1 2 · Low on-state resistance RDS(on)1 = 50 m MAX. (VGS = 4.5 V, ID

DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES · Low noise : NF = 1.9 dB TYP. @ VCE = 3 V, IC = 5 mA, f = 2 GHz · High gain : S21e2 = 7.5 dB TYP. @ VCE = 3 V, IC = 5 mA, f = 2 GHz · 3-pin super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC4228 50 pcs (Non re

DESCRIPTION Equipped with low-voltage 1.8V operation, a carrier generation circuit for infrared remote control transmission, a standby release function through key entry, and a programmable timer, the µPD6132 is suitable for infrared remote control transmitters. For the µPD6132, we have made available the one-time PROM product µPD61P34B for program evaluation or small-quantity production. FEATURES · Program memory (ROM): 512 × 10 bits · Data memory (RAM): 32

DESCRIPTION The 2SK4143 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES · Low on-state resistance RDS(on)1 = 44 m MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 m MAX. (VGS = 4.0 V, ID = 10 A) · Low input capacitance Ciss = 820 pF TYP. · Built-in gate protection diode ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE Note 2SK4143-S17-AY Pure Sn (Tin) Tube 50 p/tube Isolated TO-220 typ. 2.2 g Note Pb-free (This produ

DESCRIPTION ORDERING INFORMATION The 2SJ605 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for high current switching applications. 2SJ605 TO-220AB 2SJ605-S TO-262 FEATURES 2SJ605-ZJ TO-263 · Super low on-state resistance: RDS(on)1 = 20 m MAX. (VGS = ­10 V, ID = ­33 A) 2SJ605-Z TO-220SMDNote RDS(on)2 = 31 m MAX. (VGS = ­4.0 V, ID = ­33 A) Note TO-220SMD package is produced only · Low input capacitance in Japan. ! Ciss = 4600 pF TYP. (VDS = &sh

DESCRIPTION The PH525F is 6 elements photo diode built in I/V amplifiers for CD. It is easy to adjust the center of beam spot by using the Focus and Tracking input terminal, and possible to obtain high speed and high sensitivity. FEATURES · High speed Frequency response: fC = 14 MHz TYP. · High sensitivity Output voltage: VoF = 180 mV, VoT = 365 mV (Pi = 5 µW) · Wide operating temperature Topt = -20 to +70°C · Small package 4.0 × 5.0 mm PACKAGE DIMENSI