FEATURES · LCD driver with built-in display RAM · Can operate on a single 3-V power supply · Booster circuit incorporated: Switchable between 2X & 3X · Dot display RAM: 128 × 32 bits · Pictographic display RAM (portion of two lines): 128 × 2 bits · Pictographic display RAM duty changeable: 1/34 and 2/36 duties · Output: 128 segments & 34 commons · Data input based on serial & 4-/8-bit parallel switchover · Spl

DESCRIPTION The µPC2709TB is a silicon monolithic integrated circuits designed as 1st IF amplifier for DBS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. The µPC2709TB has compatible pin connections and performance to µPC2709T of conventional minimold version. So, in the case of reducing your system size, µPC2709TB is suitable to replace from µPC2709T. These IC is manufactured using NEC's 20 GHz fT NESATTMIII s

specifications governing the device. 3 PRECAUTION AGAINST ESD A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it when it has occurred. Environmental control must be adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that easily build up static electricity.

FEATURES · Stable operation with 220 pF capacitive load · Low noise: en = 19 nV/ Hz (TYP.) · Low input offset voltage and offset voltage · Output short circuit protection ±3 mV (MAX.) · High input impedance ... J-FET Input Stage ±7 µV/°C (TYP.) temperature drift · Internal frequency compensation · Very low input bias and offset currents · High slew rate: 25 V/ µs (TYP.) ORDERING INFORMATION Part Number Package

DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK3230 is suitable for converter of ECM. 0.3 ± 0.05 0.1 +0.1 ­0.05 FEATURES · Compact package G · High forward transfer admittance 1.6 ± 0.1 0.8 ± 0.1 1000 µS TYP. (IDSS = 100 µA) D S 1600 µS TYP. (IDSS = 200 µA) · Includes diode and high resistance at G - S 1.0 1.6 ± 0.1 ORDERING INFORMATION PART NUMBER PACKAGE 0.5 ± 0.05 2SK3230 SC-89 (TUSM) ABSOLUTE MAXIMUM RATINGS (

FEATURES · 2 different built-in transistors (NESG2046M33, NESG2107M33) Q1: High gain SiGe transistor fT = 18 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 15 mA, f = 2 GHz Q2: Low phase distortion SiGe transistor suited for OSC applications fT = 10 GHz TYP., S21e2 = 9 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz · 6-pin super lead-less minimold (1007 package) BUILT-IN TRANSISTORS Q1 Q2 3-pin super lead-less minimold part No. NESG2046M33 NESG2107M33 ORDERING INFORMATION Part Number Qu

The 2SA953 is designed for use in driver stage of high voltage audio equipment.

DESCRIPTION The µPD77113A and 77114 are 16-bit fixed-point digital signal processors (DSPs). Compared with the µPD77016 family, these DSPs have improved power consumption and are ideal for battery- powered mobile terminals such as PDAs and cellular phones. Both mask ROM and RAM models are available. For details of the functions of these DSPs, refer to the following User's Manuals: µPD77111 Family User's Manual : U14623E µPD77016 Family User's Manual - Instruct