DESCRIPTION The 2SK4081 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES · Low on-state resistance RDS(on) = 5 MAX. (VGS = 10 V, ID = 1.0 A) · Low gate charge QG = 7.2 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) · Gate voltage rating: ±30 V · Avalanche capability ratings <R> ORDERING INFORMATION PART NUMBER

DESCRIPTION ORDERING INFORMATION The 2SJ598 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ598 TO-251 (MP-3) 2SJ598-Z TO-252 (MP-3Z) FEATURES · Low on-state resistance: RDS(on)1 = 130 m MAX. (VGS = ­10 V, ID = ­6 A) RDS(on)2 = 190 m MAX. (VGS = ­4.0 V, ID = ­6 A) · Low Ciss: Ciss = 720 pF TYP. · Built-in gate protection diode · TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 2

FEATURES · Low voltage operation · 2 different built-in transistors (2SC5435, 2SC5745) Q1: High gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suited for OSC operation fT = 5.5 GHz TYP., S21e2 = 4.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz · 6-pin lead-less minimold package BUILT-IN TRANSISTORS Q1 Q2 3-pin thin-type ultra super minimold part No. 2SC5435 2SC5745 ORDERING INFORMATION Part Number

DESCRIPTION The µPD75408 is a 4-bit single-chip microcomputer whose data processing capability is comparative to that of an 8-bit microcomputer. The µPD75048 employs a CPU whose minimum instruction execution time is 0.95 µs, and contains the EEPROM, A/D converter, multi-function timer, and high performance hardware to provide high cost to performance ratio. Detailed functions are described in the following user's manual. Read this manual when designing your system. µP

FEATURES · Compatible with the µPD17717, µPD17718, and µPD17719 · Built-in one-time PROM : 32K bytes (16384 × 16 bits) · Supply voltage : PLL operation : VDD = 4.5 to 5.5 V CPU operation : VDD = 3.5 to 5.5 V ORDERING INFORMATION Part number Package µPD17P719GC-3B9 80-pin plastic QFP (14 × 14 mm, 0.65-mm pitch) The information in this document is subject to change without notice. Document No. U12112EJ1V0DS00 (1st edition) Date Published Feb

DESCRIPTION ORDERING INFORMATION The 2SK3455B is N-channel MOS FET device that features a PART NUMBER PACKAGE Note 2SK3455B-S17-AY Isolated TO-220 low gate charge and excellent switching characteristics, and Note Pb-free (This product does not contain Pb in designed for high voltage applications such as switching power External electrode.) supply, AC adapter. FEATURES · Low gate charge QG = 30 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 12 A) · Gate voltage rating : ±30 V &middot

DESCRIPTION The µ PD16772B is a source driver for TFT-LCDs capable of dealing with displays with 64-gray scales. Data input is based on digital input configured as 6 bits by 6 dots (2 pixels), which can realize a full-color display of 260,000 colors by output of 64 values -corrected by an internal D/A converter and 5-by-2 external power modules. Because the output dynamic range is as large as VSS2 + 0.1 V to VDD2 ­ 0.1 V, level inversion operation of the LCD's common electrode is r

DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA1856 is a switching device which can be driven directly by a 2.5-V power source. 8 5 The µPA1856 features a low on-state resistance and 1 :Drain1 excellent switching characteristics, and is suitable for 2, 3 :Source1 1.2 MAX. applications such as power switch of portable machine 4 :Gate1 1.0±0.05 5 :Gate2 and so on. 0.25 6, 7 :Source2 8 :Drain2 FEATURES 3° +5° ­3° · Can be driven by a 2.5-V power source 0.1&p

DESCRIPTION The PS2861-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2861-1 meets insulation thickness 0.4 mm and BSIs insulation supplementary approved. The package has shield effect to cut off ambient light, and is mounted in a plastic SOP (Small Outline Package) for high density applications. FEATURES · Isolation distance (0.4 mm MIN.) · High isolation voltage (BV = 2 500 Vr.m.s.) · SOP (Small Outline P