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NEC Electronics
PN10258EJ01V0DS
DESCRIPTION The PS2861-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2861-1 meets insulation thickness 0.4 mm and BSIs insulation supplementary approved. The package has shield effect to cut off ambient light, and is mounted in a plastic SOP (Small Outline Package) for high density applications. FEATURES · Isolation distance (0.4 mm MIN.) · High isolation voltage (BV = 2 500 Vr.m.s.) · SOP (Small Outline P
G18207EJ2V0DS00, G18207EJ2V0DS
DESCRIPTION PACKAGE DRAWING (Unit: mm) The PA2791GR is N- and P-channel MOS Field Effect 8 5 Transistors designed for switching application. N-channel 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 FEATURES P-channel 3 : Source 2 · Low on-state resistance 4 : Gate 2 5, 6 : Drain 2 N-channel RDS(on)1 = 36.0 m MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 m MAX. (VGS = 4.5 V, ID = 3.0 A) 6.0 ± 0.3 P-channel RDS(on)1 = 82 m MAX. (VGS = -10 V, ID = -3.0 A) 1 4 4.4 1.44 5.37 MAX. 0.8 RDS(on)2 =
U10436J, U10436EJ2V0DS00
DESCRIPTION The µPD780204, 780205, 780206, and 780208 microcontrollers are the products of µPD780208 subseries in 78K/0 series, and incorporate many hardware peripherals such as an FIPTM controller/driver, 8-bit resolution A/D converter, timer, serial interface, and interrupt controller. In addition to these standard mask ROM models, one-time PROM models that can operate in the same voltage range, EPROM models µPD78P0208, and various development tools are available. The functio
NPN SILICON TRANSISTOR
The 2SC2784 is the best for use as the middle range ampolifier in Hi Fi stereo control amplifiers power amplifiers and etc.
D17118EJ3V0DS00, D17118EJ3V0DS
DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SB772 is PNP silicon transistor suited for the output stage of 3 W 8.5 MAX. audio amplifier, voltage regulator, DC-DC converter and relay driver. 3.2±0.2 2.8 MAX. FEATURES · Low saturation voltage 3.8±0.2 VCE(sat) -0.5 V (IC = -2.0 A, IB = -0.2 A) · Excellent hFE linearity and high hFE 12.0 MAX. hFE2 = 60 to 400 (VCE = -2.0 V, IC = -1.0 A) · Less cramping space required due to small and thin package (TO- 126 (MP-5)) a
S14237EJ2V0DSJ1, S14237EJ2V0DS00
DESCRIPTION The µPD98412 (NEASCOT-X15) is an LSI integrating ATM switch functions on a single chip. It has UTOPIA Level2 interfaces and can switch 30 × 30 circuits by connecting multiple PHY devices. This LSI employs a shared buffer non-blocking type switch and realizes a switch capacity of 1.5G bps by using an externally connected SRAM for buffering cells. For a detailed description of the functions of the controller, refer to the following User's Manual: µPD98412 User'
PG10719EJ01V0DS
DESCRIPTION The PG2185T6R is a GaAs MMIC SPDT (Single Pole Double Throw) switch which was designed for 2.5 GHz and 6 GHz dual-band wireless LAN. This device can operate frequency from 2.5 GHz band and 6 GHz band, having the low insertion loss and high isolation. This device is housed in a 6-pin plastic TSSON (Thin Shrink Small Out-line Non-leaded) package. And this package is able to high-density surface mounting. FEATURES · Operating frequency : f = 2.4 to 2.5 GHz and 4.9 to 6.0 GHz &mid
LCD technical speci cations typically include deta
LCD technical speci cations typically include deta HDMI 1080p, Hi-Speed USB 2.0 Link, Plays it all, EasyLink, DivX Ultra Certified, Dolby Digital and Pro Logic II, Floor standing speakers, Plays it all
G16205EJ1V0DS00, G16205EJ1V0DS
DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA653TT is a switching device, which can be driven directly by a 4.0 V power source. 2.0±0.2 This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of 0.25±0.1 6 5 4 portable machine and so on. 2.1±0.1 1.6 0~0.05 FEATURES 1 2 3 · 4.0 V drive available · Low on-state resistance 0.65 0.65 RDS(on)1 = 165 m MAX. (VGS = -10 V, ID =