FEATURES · High DC current gain due to Darlington connection · High surge resistance due to on-chip protection elements: C to E: Dumper diode C to B: Zener diode · Low collector saturation voltage ° ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60±10 V Collector to emitter voltage VCEO 60±10 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) ±1.0 A Collector current (pulse) IC(pu

DESCRIPTION The µPC1876 is an integrated circuit for US MTS (Multi Channel Television Sound) system. All functions for US MTS system are provided on one chip. The µPC1876 has built-in SAP (Sub Audio Program) discrimination error protection circuit. FEATURES · BTSC (USA) standard demodulator (Stereo demodulation and TV-dbx noise reduction) · Only four adjustments (2 separation, 1 stereo VCO, 1 filter) · Supply voltage: 8 V to 10 V · Circuit current: 27 mA T

DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 wideband matched IC. This low current amplifier operates on 3.0 V. This IC is manufactured using NEC's 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These ma

specifications governing the device. 3 PRECAUTION AGAINST ESD A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it when it has occurred. Environmental control must be adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that easily build up static electricity.

DESCRIPTION PACKAGE DRAWING (Unit : mm) The µ PA1764 is N-Channel MOS Field Effect Transistor designed for high current switching applications. 8 5 1 : Source 1 2 : Gate 1 FEATURES 7, 8 : Drain 1 · Dual chip type 3 : Source 2 4 : Gate 2 · Low on-state resistance 5, 6 : Drain 2 RDS(on)1 = 27 m TYP. (VGS = 10 V, I D = 3.5 A) 6.0 ±0.3 1 4 RDS(on)2 = 32 m TYP. (VGS = 4.5 V, I D = 3.5 A) 4.4 1.44 5.37 MAX. 0.8 RDS(on)3 = 34 m TYP. (VGS = 4.0 V, I D = 3.5 A) 1.8 MAX. +0.10 &

DESCRIPTION PACKAGE DRAWING (Unit: mm) These products are zener diodes with an allowable dissipation of 500 mW and a planar type glass sealed DHD 0.5 25 MIN. (double heatsink diode) structure. FEATURES 4.2 MAX. Cathode · The zener voltage series has a wide voltage range of 2 to indication 120 V and is ideal for standardization. · The E24 series is employed for the zener voltage nominal 2.0 MAX. 25 MIN. value. ORDERING INFORMATION Any of the B1 to B7 voltage classifications are avai

DESCRIPTION PACKAGE DRAWING (Unit: mm) The NNCD6.8RL is a low capacitance type diode 1.6±0.1 developed for ESD (Electrostatic Discharge) absorption. 1.2±0.1 Based on the IEC61000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no 1 5 0.5 0.22±0.05 1.0±0.1 1.6±0.1 less than 8 kV, thus making itself most suitable for external 2 0.5 interface circuit protection. With four elements mounted in the 5-pin super mini mold 3 4 (flat lea

FEATURES · Low current consumption and high gain S21e = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz 2 S21e2 = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz · 4-pin super minimold Package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5180 50 pcs (Non reel) · 8 mm wide embossed taping 2SC5180-T1 3 kpcs/reel · Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sam

The 2SC2901 is for general purpose amplifier and high speed switching applications.