The 2SA988 is designed for use in driver stage ofAF Amplifier.

DESCRIPTION ORDERING INFORMATION The 2SJ673 is P-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SJ673 Isolated TO-220 (MP-45F) FEATURES · Super low on-state resistance (Isolated TO-220) RDS(on)1 = 20 m MAX. (VGS = -10 V, ID = -18 A) RDS(on)2 = 31 m MAX. (VGS = -4.0 V, ID = -18 A) · Low C iss: C iss = 4600 pF TYP. · Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS =

DESCRIPTION The µ PD16344 is a row driver for an AC plasma display panel (PDP) using high breakdown voltage CMOS process. The µ PD16344 consists of a 64-bit bi-directional shift register, latch circuit and high breakdown voltage CMOS driver section. The logic section operates on a 5-V power supply so that it can be connected directly to a gate array and microcomputer (CMOS level input). The driver section provides high breakdown voltage output of 120 V and +400 mA, -150 mA. Both the

DESCRIPTION The NX5504 Series is a 1 550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are designed and ideal for Fiber To The Home (FTTH). APPLICATION · FTTH (Fiber To The Home) FEATURES · Optical output power Po = 5.0 mW · Low threshold current lth = 8 mA · Differential efficiency d = 0.3 W/A · Wide operating temperature range TC = -40 to +85°C · InGaAs monitor PIN-PD · CAN

DESCRIPTION ORDERING INFORMATION The 2SK3056 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3056 TO-220AB 2SK3056-S TO-262 FEATURES 2SK3056-ZJ TO-263 · Low On-state Resistance Note 5 2SK3056-Z TO-220SMD RDS(on)1 = 34 m MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 50 m MAX. (VGS = 4.0 V, ID = 16 A) 5 Note TO-220SMD package is produced only in · Low Ciss : Ciss = 920 pF TYP. Japan. · Built-in Gate Protection Diode (

DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA1858 is a switching device, which can be driven directly by a 2.5 V power source. 8 5 This device features a low on-state resistance and 1 : Drain1 excellent switching characteristics, and is suitable for 1.2 MAX. 2, 3 : Source1 applications such as power management of portable 4 : Gate1 1.0±0.05 machine and so on. 5 : Gate2 6, 7 : Source2 0.25 8 : Drain2 FEATURES 3° +5° ­3° · 2.5 V drive available 0.5 0.1±0

The ?PD444008L is a high speed, low power, 4,194,304 bits (524,288 words by 8 bits) CMOS static RAM.Operating supply voltage is 3.3 V ± 0.3 V.The ?PD444008L is packaged in 36-pin PLASTIC SOJ

FEATURES PACKAGE DIMENSIONS (Unit: mm) · Low capacitance: Ct = 1.1 pF TYP. · High speed switching: trr = 3.0 ns MAX. 2.1±0.1 · Wide applications including switching, limitter, clipper. 1.25±0.1 · Double diode configuration assures economical use. ABSOLUTE MAXIMUM RATINGS 0.65 2 0.3+0.1 2.0±0.2 -0 Maximum Voltages and Currents (TA = 25°C) 0.65 Peak Reverse Voltage VRM 75 V 1 3 0.3+0.1 -0 DC Reverse Voltage VR 50 V Note Surge Current (1 µs