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NXP Semiconductors

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74ABT833DB, 74ABT833D, 74ABT833, 74ABT833PW, 74ABT, 74ABT833N

DESCRIPTION B bus and the part is forced into an error condition which creates an The 74ABT833 high-performance BiCMOS device combines low inverted PARITY output. This error condition can be used by the static and dynamic power dissipation with high speed and high designer for system diagnostics. output drive. QUICK REFERENCE DATA CONDITIONS SYMBOL PARAMETER TYPICAL UNIT Tamb = 25 °C; GND = 0 V tPLH Propagation delay CL = 50 pF; VCC = 5 V 3.4 ns tPHL An to Bn or Bn to An tPLH Propagation del

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74ABT833N, 74ABT833DB, 74ABT833D, 74ABT833, 74ABT833PW, 74ABT

BGA2717

description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features s Internally matched to 50 s Wide frequency range (3.2 GHz at 3 dB bandwidth) s Flat 24 dB gain (±1 dB up to 2.8 GHz) s -2.5 dBm output power at 1 dB compression point s Good linearity for

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BGA2717

CR5627

DESCRIPTION 3.5 ns rise and 2.7 ns fall with 1 supply voltage 1 (VS1) 50 V (p-p) swing and CL at 10 pF · Low power consumption: 2 input 1 1/3 page (Datasheet) 10 W with 25 MHz square wave 3 ground · Minimum small signal bandwidth: 4 output 1 85 MHz supply voltage 2 (VS2) 5 · Very fast slew rate: 12000 V/µs 6 input 2 · Excellent grey-scale linearity 1 12 7 ground · Unconditional stability 8 output 2 · Gold metallization ensures Front view MBB934 9 s

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CR5627

PSMN020-150W

DESCRIPTION PINNING SOT429 (TO247) SiliconMAX products use the latest PIN DESCRIPTION Philips Trench technology to achieve the lowest possible 1 gate on-state resistance in each package at each voltage rating. 2 drain Applications:- 3 source · d.c. to d.c. converters · switched mode power supplies tab drain 1 2 3 The PSMN020-150W is supplied in the SOT429 (TO247) conventional leaded package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SY

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PSMN020-150W

74LVC245ADB, 74LVCH245AD, 74LVC245AD, 74LVCH245ABQ, 74LVC245ABQ, 74LVCH245A, 74LVC245A, 74LVCH245APW, 74LVC245APW, 74LVCH245ADB

DESCRIPTION · 5 V tolerant inputs/outputs for interfacing with 5 V logic The 74LVC245A/74LVCH245A is a high-performance, · Wide supply voltage range from 1.2 to 3.6 V low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. · CMOS low power consumption Inputs can be driven from either 3.3 or 5 V devices. · Direct interface with TTL levels In 3-state operation outputs can handle 5 V. These · Inputs accept voltages up t

Relevant Keywords: 
74LVC245APW, 74LVCH245ADB, 74LVC245ADB, 74LVCH245AD, 74LVC245AD, 74LVCH245ABQ, 74LVC245ABQ, 74LVCH245A, 74LVC245A, 74LVCH245APW

BUK7E2R3-40C, BUK752R3-40C, BUK75, 7E2R3-40C

description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology. 1.2 Features I TrenchMOS technology I Q101 compliant I 175 °C rated I Standard level compatible 1.3 Applications I Automotive systems I General purpose power switching I Motors, lamps and solenoids I 12 V loads 1.4 Quick reference data I EDS(AL)S 1.2 J I RDSon = 1.96 m (typ) I ID 100 A I Ptot 333 W 2. Pinning information

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BUK7E2R3-40C, BUK752R3-40C, BUK75, 7E2R3-40C

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