The IP431A circuit is a monolithic three terminal programmable shunt regulator diode.

StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect,increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.

WATER CLEAR PLASTIC WIDE SPECTRAL RESPONSE 0.1" (2.54mm) LEAD SPACING LOW DARK CURRENT

HERMETICALLY SEALED TO-220 METAL, PACKAGE,SIMPLE DRIVE REQUIREMENTSand LIGHTWEIGHT.

The SMP900G-KP is a Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The electrical terminations are via two leads of diameter 0.018" on a pitch centre diameter of 0.2". The photodiode is electrically isolated from the package, which has a separate earth lead.

VDSS 800V ID(cont) 40A RDS(on) 0.18W ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain - Source 800 V

HERMETIC TO220 METAL PACKAGE, ISOLATED CASE, AVAILABLE IN COMMON CATHODE, COMMON ANODE AND SERIES VERSIONS

SILICON PNP TRANSISTOR, HIGH SPEED, LOW SATURATION SWITCH.

The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semela's Graded Buffer Zone technology combined with low emiter efficiency and local lifetime control techniques.

HIGH CURRENT.FAST SWITCHING.HIGH RELIABILITY