SILICON PLANAR EPITAXIAL PNP TRANSISTOR. HERMETIC CEREMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE). SCREENING OPTIONS AVAILABLE.

Faster Switching, Lower Leakage, 100% Avalanche Tested and Popular SOT-227 Package

Medium power, low frequency PNP bipolar transistor in a hermetically sealed TO-66 metal package.

SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN - 10 dB MINIMUM

StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect,increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.

Multi-base for efficient energy distribution across the chip resulting in significantlyimproved switching and energy ratingsacross full temperature range. Ion implant and high accuracy masking fortight control of characteristics from batch to batch.Triple Guard Rings for improved control of high voltages.

The IP78M00A series of voltage regulators are fixed output regulators intended for local, on-card voltage regulation. These devices are available in 5, 12, and 15 volt options and are capable of delivering in excess of 500mA over temperature.

LARGE NUMERICAL APERTURE FOR EASEOF COUPLING TO FIBRE OPTIC CABLES LOW NOISE WIDE INTRINSIC BANDWIDTH EXCELLENT LINEARITY LOW LEAKAGE CURRENT LOW CAPACITANCE TO-46 HERMETIC METAL CAN PACKAGE

SIMPLIFIED AMPLIFIER DESIGN.SUITABLE FOR BROAD BAND APPLICATIONS.Extra LOW Crss. SIMPLE BIAS CIRCUITS. LOW NOISE.HIGH GAIN - 10 dB MINIMUM.

HERMETICALLY SEALED SIMPLE DRIVE REQUIREMENTS LIGHTWEIGHT SCREENING OPTIONS AVAILABLE ALL LEADS ISOLATED FROM CASE