Seme LAB
HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
SILICON PLANAR EPITAXIAL PNP TRANSISTOR. HERMETIC CEREMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE). SCREENING OPTIONS AVAILABLE.
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Faster Switching, Lower Leakage, 100% Avalanche Tested and Popular SOT-227 Package
PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR
Medium power, low frequency PNP bipolar transistor in a hermetically sealed TO-66 metal package.
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W - 12.5VV - 1GHz SINGLE ENDED
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN - 10 dB MINIMUM
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect,increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Multi-base for efficient energy distribution across the chip resulting in significantlyimproved switching and energy ratingsacross full temperature range. Ion implant and high accuracy masking fortight control of characteristics from batch to batch.Triple Guard Rings for improved control of high voltages.
0.5 AMP POSITIVE VOLTAGE REGULATOR IN A CERAMIC SURFACE MOUNT PACKAGE
The IP78M00A series of voltage regulators are fixed output regulators intended for local, on-card voltage regulation. These devices are available in 5, 12, and 15 volt options and are capable of delivering in excess of 500mA over temperature.
P.I.N. PHOTODIODE
LARGE NUMERICAL APERTURE FOR EASEOF COUPLING TO FIBRE OPTIC CABLES LOW NOISE WIDE INTRINSIC BANDWIDTH EXCELLENT LINEARITY LOW LEAKAGE CURRENT LOW CAPACITANCE TO-46 HERMETIC METAL CAN PACKAGE
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W - 28V - 400MHz PUSH-PULL
SIMPLIFIED AMPLIFIER DESIGN.SUITABLE FOR BROAD BAND APPLICATIONS.Extra LOW Crss. SIMPLE BIAS CIRCUITS. LOW NOISE.HIGH GAIN - 10 dB MINIMUM.
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
HERMETICALLY SEALED SIMPLE DRIVE REQUIREMENTS LIGHTWEIGHT SCREENING OPTIONS AVAILABLE ALL LEADS ISOLATED FROM CASE