The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising Semelab's Graded Buffer Zone technology combined with low emitter efficiency and local lifetime control techniques.

Designed for switching and wide - band amplifier applications, This product is available screened inaccordance with various military specs.EG. 2N5430CECC-QR-BBuilt and screened in accordance withCECC procedures.Screened to sequence B.

SIMPLIFIED AMPLIFIER DESIGN,SUITABLE FOR BROAD BAND APPLICATIONS,VERY LOW Crss,SIMPLE BIAS CIRCUITS

StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect,increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.

SIMPLIFIED AMPLIFIER DESIGN.SUITABLE FOR BROAD BAND APPLICATIONS. LOW Crss. SIMPLE BIAS CIRCUITS. LOW NOISE.HIGH GAIN - 16 dB MINIMUM.

EXCELLENT LINEARITYASYMMETRIC VIEWING ANGLES WIDEST SPECTRAL RESPONSE ENHANCED UV SENSITIVITY PHOTODIODE ISOLATED FROM PACKAGE EXCELLENT LINEARITY LOW NOISE LOW LEAKAGE CURRENT LOW CAPACITANCE INTEGRAL OPTICAL FILTER OPTION note 1 TO39 HERMETIC METAL CAN PACKAGE EMI SCREENING MESH AVAILABLE

0.01%/V LINE REGULATION 0.3%/A LOAD REGULATION THERMAL OVERLOAD PROTECTION SHORT CIRCUIT PROTECTION SAFE OPERATING AREA PROTECTION 1% OUTPUT VOLTAGE TOLERANCE

StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect,increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.

SIMPLIFIED AMPLIFIER DESIGN.SUITABLE FOR BROAD BAND APPLICATIONS.Very LOW Crss. SIMPLE BIAS CIRCUITS. LOW NOISE.HIGH GAIN .

HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE. SIMPLE DRIVE REQUIREMENTS LIGHTWEIGHT HIGH PACKING DENSITIES