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GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W - 28V - 500MHz PUSH-PULL

SIMPLIFIED AMPLIFIER DESIGN.SUITABLE FOR BROAD BAND APPLICATIONS. LOW Crss. SIMPLE BIAS CIRCUITS. LOW NOISE.HIGH GAIN - 10 dB MINIMUM.

Relevant Keywords: 
D1022UK
Related Datasheets: 
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W - 28V - 1GHz SINGLE ENDED
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W - 28V - 400MHz SINGLE ENDED
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W - 28V - 400MHz SINGLE ENDED
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W - 28V - 1GHz PUSH PULL
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W - 28V - 1GHz SINGLE ENDED
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W - 28V - 1GHz SINGLE ENDED
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W - 28V - 1GHz PUSH PULL
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 750W - 12V - 1GHz SINGLE ENDED
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 28V - 1GHz PUSH PULL
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W - 12.5VV - 1GHz SINGLE ENDED

PNP SILICON TRANSISTOR, EPITAXIAL BASE

LF Large Signal Power Amplification Medium Current Switching

Relevant Keywords: 
BDX14AA
Related Datasheets: 
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR

N-CHANNEL POWER MOSFET

HERMETICALLY SEALED ISOLATED Z-TAB PACKAGE AVALANCHE ENERGY RATING SIMPLE DRIVE REQUIREMENTS ALSO AVAILABLE IN A SURFACE MOUNT PACKAGE EASE OF PARALLELING

Relevant Keywords: 
IRFM450
Related Datasheets: 
N-channel 30 V, 0.015 Ω, 9 A, PowerFLAT™ (3.3x3.3) STripFET™ V Power MOSFET
N-channel 55 V, 0.0065 Ω, 80 A, TO-220, D²PAK, TO-247 STripFET™ Power MOSFET
RF power transistors HF/VHF/UHF N-channel MOSFETs
N-channel 55V - 6.5mΩ - 80A - DPAK - STripFET™ Power MOSFET
N-channel 60 V, 3 mΩ, 120 A D²PAK, TO-220, I²PAK STripFET™ Power MOSFET
N-channel 30V - 0.018 Ohm - 9A - SO-8 Low gate charge STripFET III Power MOSFET
STB21N65M5, STF21N65M5 STI21N65M5, STP21N65M5, STW21N65M5 N-channel 650 V, 0.159 Ω, 17 A MDmesh™ V Power MOSFET D2PAK, TO-220FP, TO-220, I2PAK, TO-247
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
N-channel 150 V, 0.057Ω, 5 A, SO-8 STripFET™ DeepGATE™ Power MOSFET
N-channel 600V - 0.35 Ω - 10A - D²/I²PAK - TO-220/FP - TO-247 - second generation MDmesh™ Power MOSFET

P.I.N. PHOTODIODE

The SMP400G-X2 is a silicon PIN photodiode which is incorporated in a colourless plastic package. The terminals are solder tabs with 0.1" (2.54mm) spacing. Due to its design the diode can be assembled vertically on PC board.

Relevant Keywords: 
SMP400G-X2
Related Datasheets: 
1300 nm - 1550 nm, 3 GHz Linear PIN Photodiode
PHOTODIODEInGaAs PIN photodiodeLong wavelength typ
IR-BLOC Ambient Light Sensor - IR - Blocking Silicon Photodiode VTP9812FH
Features5-element photodiode (1 element in center,
DN273 - Fiber Optic Communication Systems Benefit from Tiny, Low Noise Avalanche Photodiode Bias Supply
DN399 - Low Noise Amplifi ers for Small and Large Area Photodiodes
DN399 - Low Noise Amplifi ers for Small and Large Area Photodiodes
Si photodiodeThe S9032-02 is a color sensor molded
ADL5317 Avalanche Photodiode Bias Controller and Wide Range (5 nA to 5 mA) Current Monitor Data Sheet (Rev. 0)
Si photodiodeThe S9032-02 is a color sensor molded

COMPLEMENTARY DARLINGTON POWER TRANSISTOR

The MJ2501 is a silicon power transistor in a monolithic Darlington configuration mounted in a traditional TO-3 metal case.

Relevant Keywords: 
MJ3001-NPN, MJ3001, MJ2501-PNP, MJ2501
Related Datasheets: 
Zetex - BC372P Silicon planar medium power Darlington transistor datasheet
Zetex - BC372 Silicon planar medium power Darlington transistor datasheet
SILICON POWER DARLINGTON TRANSISTORS (PNP)2N6034,
Zetex - ZTX605 Silicon planar medium power Darlington transistor datasheet
Zetex - MPSA77P Silicon planar medium power Darlington transistor datasheet
Zetex - ZTX705 Silicon planar medium power Darlington transistor datasheet
Zetex - ZTX603 Silicon planar medium power Darlington transistor datasheet
Zetex - FXT38C Silicon planar medium power Darlington transistor datasheet
Zetex - FXT705 Silicon planar medium power Darlington transistor datasheet
Zetex - FXT614 Silicon planar medium power Darlington transistor datasheet

NPN TRANSISTOR

SILICON NPN TRANSISTOR

Relevant Keywords: 
2N2857
Related Datasheets: 
NPN 1 GHz wideband transistor
PEMH4; PUMH4 NPN/NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = open
MPSA56 PNP general purpose transistor
Low voltage fast-switching NPN power transistor
RF power transistors HF/VHF/UHF N-channel MOSFETs
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
SMALL SIGNAL NPN TRANSISTOR
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
RF power transistor the LdmoST family, N-channel enhancement-mode lateral MOSFETs

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