Designed for use in Industrial - Military Power Amplifier and Switching Circuit Applications

HERMETICALLY SEALED SMD2 CERAMIC PACKAGE SIMPLE DRIVE REQUIREMENTS SCREENING OPTIONS AVAILABLE

StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect,increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.

Short Switching Times.High Reverse Voltage.

The SMP550G-EL is a Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The electrical terminations are via two leads of diameter 0.018" on a pitch centre diameter of 0.2". The can structure incorporates an photoptic response optical filter with peak transmission at 510nm. The cathode of the photodiode is electrically connected to the package.

HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE. SIMPLE DRIVE REQUIREMENTS LIGHTWEIGHT HIGH PACKING DENSITIES

The SMP1000G-KP is a large Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The electrical terminations are via two leads of diameter 0.018" on a pitch centre diameter of 0.2". The photodiode is electrically isolated from the package, which has a separate earth lead.

SIMPLIFIED AMPLIFIER DESIGN.SUITABLE FOR BROAD BAND APPLICATIONS.Very LOW Crss. SIMPLE BIAS CIRCUITS. LOW NOISE.HIGH GAIN - 10 dB MINIMUM.

HERMETICALLY SEALED TO-220 METAL, PACKAGE,SIMPLE DRIVE REQUIREMENTSand LIGHTWEIGHT.

The BFY84 is a six terminal device containingtwo isolated silicon planar epitaxial NPNtransistors in Jedec TO77 metal case.The good thermal tracking over a wide currentand temperature range, offers the circuitdesigner matched transistors with specifiedperformance for differential amplifiers.