HERMETIC CERAMIC SURFACE MOUNT PACKAGE. SCREENING OPTIONS AVAILABLE.

DYNAMIC CHARACTERISTICS Characteristic Test Ciss Coss Input capacitance Output capacitance VGS = 0V VDS = 25V pF 2460 2950 360 500

SILICON PLANAR EPITAXIAL NPN TRANSISTOR, HERMETIC CERAMIC SURFACE MOUNT PACKAGE and CECC SCREENING OPTIONS

FEATURES Silicon Planar PNP Transistor Hermetic Ceramic Surface Mount Package  CECC Screening Options Space quality OptionsLCC3 PACKAGEUndersideViewPAD 1 CollectorPAD 2 N/CPAD 3 EmitterPAD 4 Base2N54152N5416-200V-200V -4V -350V-300V -6V ParameterTest ConditionsMin.Typ.Max.Unit V CB = -1

The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising Semelab's Graded Buffer Zone technology combined with low emitter efficiency and local lifetime control techniques.

Designed for switching and wide - band amplifier applications

SIMPLIFIED AMPLIFIER DESIGN,SUITABLE FOR BROAD BAND APPLICATIONS,VERY LOW Crss,SIMPLE BIAS CIRCUITS

StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect,increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.

HIGH CURRENT.FAST SWITCHING.HIGH RELIABILITY

ASYMMETRIC RECEIVING ANGLES EYE RESPONSE DETECTION PHOTODIODE ISOLATED FROM PACKAGE EXCELLENT LINEARITY LOW NOISE WIDE SPECTRAL RESPONSE LOW LEAKAGE CURRENT LOW CAPACITANCE BG18 INTEGRAL OPTICAL FILTER TO39 HERMETIC METAL CAN PACKAGE EMI SCREENING MESH AVAILABLE