HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE. SIMPLE DRIVE REQUIREMENTS LIGHTWEIGHT HIGH PACKING DENSITIES

StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect,increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.

SIMPLIFIED AMPLIFIER DESIGN.SUITABLE FOR BROAD BAND APPLICATIONS. Very LOW Crss. SIMPLE BIAS CIRCUITS. LOW NOISE.HIGH GAIN - 10 dB MINIMUM.

HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE. SIMPLE DRIVE REQUIREMENTS LIGHTWEIGHT HIGH PACKING DENSITIES

VDSS 800V ID(cont) 9.0A RDS(on) 1.25W ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain - Source Voltage 800

SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN

Low saturation voltages, High current gain at 40A. (20 Typ.) and Hermetic metal package.

GENERAL PURPOSE SWITCHING AND AMPLIFIER APPLICATIONS. MAINTENANCE STATUS DO NOT USE ON NEW DESIGNS.

The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising Semelab's Graded Buffer Zone technology combined with low emitter efficiency and local lifetime control techniques.

Silicon Planar PNP Transistor Hermetic Ceramic Surface Mount Package CECC Screening Options Space quality Options