The PMD18D100 is an NPN Darlington Power Transistor in a hermetic TO3 package. The device is a monolothic epitaxial structure with built in base-emitter shunt resistor.

Multi-base for efficient energy distribution across the chip resulting in significantlyimproved switching and energy ratingsacross full temperature range. Ion implant and high accuracy masking fortight control of characteristics from batch to batch.Triple Guard Rings for improved control of high voltages.

Ceramic Surface Mount Package, VRRM =100V and IF(AV) = 2.5A.

SIMPLIFIED AMPLIFIER DESIGN.SUITABLE FOR BROAD BAND APPLICATIONS. LOW Crss. SIMPLE BIAS CIRCUITS. LOW NOISE.HIGH GAIN - 13 dB MINIMUM.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit IR* Reverse Current TVJ = 25°C VR = VRRM TVJ = 125°C VR = VRRM 1.3 1.3 mA

HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE), CECC SCREENING OPTIONS, SPACE QUALITY LEVELS OPTIONS

Freewheeling Diode for IGBTs and MOSFETs, Uninterruptible Power Supplies UPS and Switch Mode Power Upplies SMPS.

SIMPLE DRIVE REQUIREMENTS HERMETICALLY SEALED REPETITIVE AVALANCHE RATING

SUITABLE FOR BROAD BAND APPLICATIONS,SIMPLE BIAS CIRCUITS,ULTRA-LOW THERMAL RESISTANCE,BeO FREE,LOW Crss