Tabless Version Available and Screening Options Available

HERMETIC CERAMIC SURFACE MOUNT PACKAGE, CECC SCREENING OPTIONS AND SPACE QUALITY LEVELS OPTIONS.

The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab's Graded Buffer Zone technology combined with low emitter efficiency and local lifetime control techniques.

The 2N5152 and the 2N5154 are siliconexpitaxial planar NPN transistors in jedecTO-39 metal case intended for use inswitching applications.The complementary PNP types are the 2N5151and 2N5153 respectively

SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN - 10 dB MINIMUM

FAST SWITCHING.HIGH PULSE POWER.

StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.

TO257AB HERMETIC PACKAGE FOR HIGH RELIABILITY APPLICATIONS SCREENING OPTIONS AVAILBLE SIMPLE DRIVE REQUIREMENTS

The IP34063 series of control circuits contains all the functions required to implement DC-DC converters. Included are internal voltage reference, comparator, controlled duty cycle oscillator with current limit circuit, driver, and high current output switch.

SIMPLIFIED AMPLIFIER DESIGN.SUITABLE FOR BROAD BAND APPLICATIONS. Very LOW Crss. SIMPLE BIAS CIRCUITS. LOW NOISE.HIGH GAIN - 13 dB MINIMUM.SURFACE MOUNT.