VDSS 600V ID(cont) 57A RDS(on) 0.090W ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain - Source Voltage 600 V, ID Continuous Drain Current 57 A

The SMP550G-X3 is a silicon PIN photodiode which is incorporated in a red plastic package which simultaneously serves as a filter and is also transparent for red to infrared emission. The terminals are solder tabs with 0.1" (2.54mm) spacing. Due to its design the diode can be assembled vertically on PC board.

HERMETIC TO220 METAL PACKAGE, ISOLATED CASE, SCREENING OPTIONS AVAILABLE, OUTPUT CURRENT 30A

SILICON PLANAR EPITAXIAL PNP TRANSISTOR. HERMETIC CEREMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE). SCREENING OPTIONS AVAILABLE.

HIGH CURRENT.FAST SWITCHING.HIGH RELIABILITY

The 2N5151SMD05 and the 2N5153SMD05 aresilicon expitaxial planar PNP transistors in aCeramic Surface Mount Package for use inSwitching and Linear applications.The complementary NPN types are the2N5152SMD05 and 2N5154SMD05 respectively

SIMPLIFIED AMPLIFIER DESIGN.SUITABLE FOR BROAD BAND APPLICATIONS. LOW Crss. SIMPLE BIAS CIRCUITS. LOW NOISE.HIGH GAIN - 10 dB MINIMUM.

SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS ,LOW NOISE,HIGH GAIN

StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect,increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.

LOW NOISE PHOTODIODE ISOLATED FROM PACKAGE WIDE SPECTRAL RESPONSE WIDE INTRINSIC BANDWIDTH WIDE VIEWING ANGLE LOW LEAKAGE CURRENT LOW CAPACITANCE INTEGRAL OPTICAL FILTER OPTION note 1 TO18 HERMETIC METAL CAN PACKAGE EMI SCREENING MESH AVAILABLE