The ST6006 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This ST6006 is densigned to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional

The ST2303 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on- tate resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package.

AF OUTPUT AMPLIFIER, FOR DC-DC CONVERTER, FOR CAMERA MOTOR DRIVER

The ST3414 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high- de switching, and low in-line power loss are needed in a very small outline surface mount package.

The ST2304 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on- tate resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss areneeded in a very small outine surface mount package.

AF OUTPUT AMPLIFIER, FOR DC-DC CONVERTER, FOR CAMERA MOTOR DRIVER

The ST3403 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package.

Power Dissipation Pcm : 1.0W, Collector Current Icm : 1.5A, Collector-Base Voltage Vcbo: 45V.

AF OUTPUT AMPLIFIER, FOR DC-DC CONVERTER, FOR CAMERA ELECTRONIC FALSH UNIT, HIGH PERFORMANCE AT LOW SUPPLY VLOTAGE, LOW VCE(SAT)

The ST3402 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on- tate resistance. These devices are articularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.