Toshiba Semiconductor
Audio Frequency General Purpose Amplefier Applications
Small package (dual type).High voltage and high current: VCEO = 50 V, IC = 150 mA (max).High hFE: hFE = 120~400.Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.).Complementary to 2SA1873.
High Power Switching Applications
Small package by full molding (SIP 12 pin) High collector power dissipation (4-device operation) : PT = 4.4 W (Ta = 25°C) High collector current: IC (DC) = 3 A (max) High DC current gain: hFE = 600 (min) (VCE = 2 V, IC = 1 A)
TOSHIBA InGaA?P LED
Lead(Pb)-free products (lead: Sn-Ag-Cu) InGaA?P LED Without stand?offs All plastic mold type Colored lusterless lens Lineup: 3 colors (red, orange, yellow) Suitable for high?brightness and less electricity consumption. All plastic molded lens, provides an excellent on?off contrast ratio. Applications: Backlight, light for decoration, switches, various indicator, personal equipment
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
Low drain-source ON resistance: RDS (ON) = 72 m? (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current: IDSS =-10 µA (max) (VDS = -20 V) Enhancement-model: Vth = -0.5 to-1.2 V(VDS =-10 V, ID = -200 µA) Low forward voltage: VFM(2) = 0.46V(typ.)
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic 1 GHz Band Down Converter Application CATV Analog/Digital Tuner Terrestrial Digital TV Tuner
Low distortion at high RF signal input (IIP3): +13dBmW Performance at low Lo signal input: ?5dBmW Double balanced Mix circuit Small package: SM8 (2.9 Æ’" 4.0) Recommended operating voltage: VCC = 4.25~4.75 V
TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
The TD62307P, TD62307F are comprised of seven NPN low saturation drivers. All units feature integral clamp diodes for switching inductive loads and protective diodes against a negative input voltage. Applications include relay, hammer, lamp and LED driver.
Silicon Diffused Type
Average power dissipation : P = 2.0 W Zener voltage : VZ = 12 V ~ 53 V Suitable for compact assembly due to small surface-mount package "M-FLATTM" (Toshiba package name)
TOSHIBA Transistor Silicon PNP · NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost.
TOSHIBA Schottky Barrier Rectifier Stack Trench Schottky Barrier Type
Repetitive peak reverse voltage: VRRM = 40 V Average output recified current: IO = 30 A Power surface-mount device for thin flat package, "TFP" (Toshiba package name)
TOSHIBA Digital Integrated Circuit Silicon Monolithic Low Voltage/Low Power 2-Bit ? 2 Dual Supply Bus Transceiver
The TC7MP3125FK/FTG is a dual supply, advanced high-speed CMOS 4-bit dual supply voltage interface bus transceiver fabricated with silicon gate CMOS technology. It is also designed with over voltage tolerant inputs and outputs up to 3.6 V. Designed for use as an interface between a 1.2-V, 1.5-V, 1.8-V, or 2.5-V bus and a 1.8-V, 2.5-V or 3.6-V bus in mixed 1.2-V, 1.5-V, 1.8-V or 2.5-V/1.8-V, 2.5-V or 3.6-V supply systems. The A-port interfaces with the 1.2-V, 1.5-V, 1.8-V or 2.5-V bus, the B-por