MITSUBISHI <INTELLIGENT POWER MODULES> FLAT-BASE TYPE INSULATED PACKAGE
Adopting new 4th generation planar IGBT chip, which per-ormance is improved by 1µm fine rule process.For example, typical VCE(sat)=1.7V Using new Diode which is designed to get soft reverse recovery characteristics. Keeping the package compatibility.The layout/position of both terminal pin and mounting hole s same as S-series 3rd generation IPM.
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PM75RSD060, PM75RSD060
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