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SILICON DIAC BIDIRECTIONAL TRIGGER DIODE GLASS PASSIVATED PNPN DEVICE


Power Dissipation on Printed Circuit (L=10mm) (Ta=50o C) Up to Ta = 50o C and Mounted on a Ceramic Substrate of 10mm x 10mm x 0.6mm Repetitive Peak on-State Current (tp=20m ms, f=100Hz) Storage Temperature Range Junction Temperature Range

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CLLDB3Rev170402E, CLLDB3

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