The 13PD100-S, an InGaAs photodiode with a 100mm-diameter photosensitive region mounted on a metallized ceramic substrate, is the largest standard device enabling a 1 GHz frequency cutoff. Planar semiconductor design and dielectric passivation provide low noise performance. Reliability is assured by a 100% purge burn-in (200oC, 15 hours, Vr = 20V). Chips can be attached and wire bonded to standard submounts, customer-supplied submounts or other specified packages.