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FPD750SOT343 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
The FPD750SOT343 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels. The FPD750 is available in die form and in other packages.
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FPD750SOT343, FPD750
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