RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the combination of increased signal "gain" demands, coupled with the required downsizing of the transistor package. The ability to achieve both objectives is tied to a reduced thickness of the SiO2 gate insulator layer within the semiconductor. The corresponding result of such a change increases the Power Amplifier's (PA's) vulnerability to ESD strikes - a common event with handheld electronic products with RF transmitting and/or receiving features.